Fabrication and testing of 4500 V SiC SBD and JFET power modules

被引：0
|
作者：
He, Junwei [1 ]
Chen, Sizhe [1 ]
Ren, Na [1 ]
Bai, Song [2 ]
Tao, Yonghong [2 ]
Liu, Ao [2 ]
Sheng, Kuang [1 ]
机构：
[1] College of Electrical Engineering, Zhejiang University, Hangzhou,310027, China
[2] Nanjing Electronic Devices Institute, Nanjing,210016, China
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2015年 / 30卷 / 17期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Silicon carbide
引用
收藏
页码：63 / 69
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