Thin film bulk acoustic resonator (FBAR) technology and its applications

被引：0
|
作者：
He, Jie [1 ]
Liu, Rong-Gui [1 ]
Ma, Jin-Yi [1 ]
机构：
[1] Sichuan Institute of Piezoelectric and Acousto-optic Technology, Chongqing 400060, China
来源：
Yadian Yu Shengguang/Piezoelectrics and Acoustooptics | 2007年 / 29卷 / 04期
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摘要：
The thin film bulk acoustic wave devices have the features of small size, low cost, high Q-value, high power handling capability and application of high frequencies and compatibility with IC-technology. They can be used advantageously in RF system operating between land 10 GHz. They are expected to replace traditional SAW devices and microwave ceramic devices in the future wireless communication system. This paper presents an overview of the principle of FBAR technology and its new development and applications. Three device structures and their fabrications were analyzed. A brief discussion of the future trends and challenges of FBAR technology is also described.
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页码：379 / 382
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