High rate etching of InSb in high density plasma of CH4/H2/Ar and Cl2

被引：0

作者：

Zhang, Guodong ^{[1
]}

Si, Junjie ^{[1
]}

Wang, Liwen ^{[1
]}

机构：

[1] Luoyang Opto-Electro Technology Development Center, Luoyang 471009, China

来源：

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2012年 / 41卷 / 04期

关键词：

Etch rates - Etched surface roughness - High density plasmas - Inductively coupled plasma (ICP) - InSb - Local accumulations - Sidewall angles - Substrate temperature;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：843 / 846

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