High rate etching of InSb in high density plasma of CH4/H2/Ar and Cl2

被引：0
|
作者：
Zhang, Guodong [1 ]
Si, Junjie [1 ]
Wang, Liwen [1 ]
机构：
[1] Luoyang Opto-Electro Technology Development Center, Luoyang 471009, China
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2012年 / 41卷 / 04期
关键词：
Etch rates - Etched surface roughness - High density plasmas - Inductively coupled plasma (ICP) - InSb - Local accumulations - Sidewall angles - Substrate temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：843 / 846
相关论文
共 50 条
  • [21] Characterization of Cl2/Ar high density plasmas for semiconductor etching
    Eddy, CR
    Leonhardt, D
    Douglass, SR
    Thoms, BD
    Shamamian, VA
    Butler, JE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (01): : 38 - 51
  • [22] Surface cleaning and etching of CdZnTe and CdTe in H2/Ar, CH4/H2/Ar, and CH4/H2/N2/Ar electron cyclotron resonance plasmas
    Robert C. Keller
    H. Zimmermann
    M. Seelmann-Eggebert
    H. J. Richter
    Journal of Electronic Materials, 1997, 26 : 542 - 551
  • [23] Comparison of GaSb p-n junction photodiodes fabricated using Cl2/Ar and Cl2/BCl3/CH4/Ar/H2 plasma.
    Bhagwat, V
    Langer, IP
    Bhat, I
    Dutta, PS
    Refaat, T
    Abedin, MN
    2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS, 2004, : 220 - 225
  • [24] Vertical and smooth, etching of InP by Cl2/CH4/Ar inductively coupled plasma at room temperature
    Sun, CZ
    Zhou, JB
    Xiong, B
    Wang, J
    Luo, Y
    CHINESE PHYSICS LETTERS, 2003, 20 (08) : 1312 - 1314
  • [25] High verticality InP/InGaAsP etching in Cl2/H2/Ar inductively coupled plasma for photonic integrated circuits
    Parker, John S.
    Norberg, Erik J.
    Guzzon, Robert S.
    Nicholes, Steven C.
    Coldren, Larry A.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
  • [26] Etching of Gallium Arsenide in a Cl2 + H2 Plasma
    Efremov A.M.
    Antonov A.V.
    Russian Microelectronics, 2001, 30 (1) : 1 - 6
  • [27] Inductively coupled plasma etching of InP using CH4/H2 and CH4/H2/N2
    Chen, HY
    Ruda, HE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 47 - 52
  • [28] Effect of doping elements on ZnO etching characteristics with CH4/H2/Ar plasma
    Shin, M. H.
    Park, M. S.
    Jung, S. H.
    Boo, J. H.
    Lee, N.-E.
    THIN SOLID FILMS, 2007, 515 (12) : 4950 - 4954
  • [29] High-rate growth of single crystal diamond in microwave plasma in CH4/H2 and CH4/H2/Ar gas mixtures in presence of intensive soot formation
    Bolshakov, A. P.
    Ralchenko, V. G.
    Yurov, V. Y.
    Popovich, A. F.
    Antonova, I. A.
    Khomich, A. A.
    Ashkinazi, E. E.
    Ryzhkov, S. G.
    Vlasov, A. V.
    Khomich, A. V.
    DIAMOND AND RELATED MATERIALS, 2016, 62 : 49 - 57
  • [30] High-density plasma etching of iridium thin films in a Cl2/O2/Ar plasma
    Chung, CW
    Kim, HI
    Song, YS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (05) : G297 - G299
12345