High rate etching of InSb in high density plasma of CH4/H2/Ar and Cl2

被引：0
|
作者：
Zhang, Guodong [1 ]
Si, Junjie [1 ]
Wang, Liwen [1 ]
机构：
[1] Luoyang Opto-Electro Technology Development Center, Luoyang 471009, China
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2012年 / 41卷 / 04期
关键词：
Etch rates - Etched surface roughness - High density plasmas - Inductively coupled plasma (ICP) - InSb - Local accumulations - Sidewall angles - Substrate temperature;
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摘要：
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页码：843 / 846
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