Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands

被引：0
|
作者：
Ohkura, Kensaku [1 ]
T., Kitade [1 ]
A., Nakajima [1 ]
机构：
[1] Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Hiroshima 739-8527, Japan
来源：
Journal of Applied Physics | 2005年 / 98卷 / 12期
关键词：
Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1 / 6
相关论文
共 50 条
  • [41] Single-electron transistor logic
    Chen, RH
    Korotkov, AN
    Likharev, KK
    APPLIED PHYSICS LETTERS, 1996, 68 (14) : 1954 - 1956
  • [42] Ferritin Single-Electron Transistor
    Labra-Munoz, Jacqueline A.
    van der Zant, Herre S. J.
    JOURNAL OF PHYSICAL CHEMISTRY B, 2024, 128 (26): : 6387 - 6393
  • [43] Refrigerator based on the Coulomb barrier for single-electron tunneling
    Pekola, Jukka P.
    Koski, Jonne V.
    Averin, Dmitri V.
    PHYSICAL REVIEW B, 2014, 89 (08):
  • [44] Rhombic Coulomb diamonds in a single-electron transistor based on an Au nanoparticle chemically anchored at both ends
    Azuma, Yasuo
    Onuma, Yuto
    Sakamoto, Masanori
    Teranishi, Toshiharu
    Majima, Yutaka
    NANOSCALE, 2016, 8 (08) : 4720 - 4726
  • [45] Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors
    Wan, YM
    Huang, KD
    Hu, SF
    Sung, CL
    Chou, YC
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
  • [46] Spin polarization and magneto-Coulomb oscillations in ferromagnetic single-electron transistors
    Ootuka, Y
    Matsuda, R
    Ono, K
    Shimada, H
    PHYSICA B-CONDENSED MATTER, 2000, 280 (1-4) : 394 - 398
  • [47] Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor
    Park, JW
    Park, KS
    Lee, BT
    Lee, CH
    Lee, SD
    Choi, JB
    Yoo, KH
    Kim, J
    Oh, SC
    Park, SI
    Kim, KT
    Kim, JJ
    APPLIED PHYSICS LETTERS, 1999, 75 (04) : 566 - 568
  • [48] Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process
    Nakajima, A
    Futatsugi, T
    Kosemura, K
    Fukano, T
    Yokoyama, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05): : 2163 - 2171
  • [49] SINGLE-ELECTRON TRANSISTOR BASED ON POROUS ANODIC ALUMINA
    Sokol, V. A.
    Yakovtseva, V. A.
    2014 24TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY (CRIMICO), 2014, : 803 - 804
  • [50] The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor
    Kim, J
    Oh, S
    Kim, JJ
    Lee, JO
    Park, JW
    Yoo, KH
    Kwon, HC
    PHYSICA B, 2000, 284 : 1794 - 1795
12345