Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands

被引:0
|
作者
Ohkura, Kensaku [1 ]
T., Kitade [1 ]
A., Nakajima [1 ]
机构
[1] Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Hiroshima 739-8527, Japan
来源
Journal of Applied Physics | 2005年 / 98卷 / 12期
关键词
Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1 / 6
相关论文
共 50 条
  • [21] Asymmetric tunnel barrier in a Si single-electron transistor
    Fujiwara, A
    Takahashi, Y
    Murase, K
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 197 - 199
  • [22] Theory of activated conduction in a Si single-electron transistor
    NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    Microelectron Eng, 1 (205-207):
  • [23] Single-electron transistor in strained Si/SiGe heterostructures
    Berer, Thomas
    Pachinger, Dietmar
    Pillwein, Georg
    Muehlberger, Michael
    Lichtenberger, Herbert
    Brunthaler, Gerhard
    Schaeffler, F.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 34 (1-2): : 456 - 459
  • [24] Theory of activated conduction in a Si single-electron transistor
    Tamura, H
    Takahashi, Y
    Murase, K
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 205 - 207
  • [25] Asymmetric tunnel barrier in a Si single-electron transistor
    NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    Microelectron Eng, 1 (197-199):
  • [26] Quantum coulomb blockade phenomena in single-electron transistor based on graphene quantum dot
    Moulhim, Ali
    Tripathi, Brijesh
    Kumar, Manoj
    MATERIALS TODAY-PROCEEDINGS, 2022, 67 : 838 - 841
  • [27] A SINGLE-ELECTRON TRANSISTOR
    不详
    IEEE SPECTRUM, 1991, 28 (02) : 19 - 19
  • [28] THE SINGLE-ELECTRON TRANSISTOR
    KASTNER, MA
    REVIEWS OF MODERN PHYSICS, 1992, 64 (03) : 849 - 858
  • [29] COULOMB-BLOCKADE OF ANDREEV REFLECTION IN THE NSN SINGLE-ELECTRON TRANSISTOR
    EILES, TM
    DEVORET, MH
    MARTINIS, JM
    SURFACE SCIENCE, 1994, 305 (1-3) : 536 - 540
  • [30] Single-electron transistor backaction on the single-electron box
    Turek, BA
    Lehnert, KW
    Clerk, A
    Gunnarsson, D
    Bladh, K
    Delsing, P
    Schoelkopf, RJ
    PHYSICAL REVIEW B, 2005, 71 (19):