Preparation of semi-insulating material by annealing undoped InP

被引：0
|
作者：
Zhao, Youwen [1 ]
Dong, Hongwei [1 ]
Jiao, Jinghua [1 ]
Zhao, Jianqun [1 ]
Lin, Lanying [1 ]
Sun, Niefeng [1 ]
Sun, Tongnian [1 ]
机构：
[1] Mat. Sci. Cent., Inst. of Semi-conduct., Chinese Acad. of Sci., Beijing 100083, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 03期
关键词：
Deep defect - Iron phosphide - Pure phosphorus - Semi insulating indium phosphide;
D O I：
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摘要：
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页码：285 / 289
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