Surface photovoltage in undoped semi-insulating GaAs

被引：0
|
作者：
机构：
[1] Liu, Qiang
[2] Chen, Chao
[3] Ruda, Harry
来源：
Liu, Qiang | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 74期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] COMPENSATION MECHANISM IN UNDOPED, SEMI-INSULATING GAAS
    SUEMITSU, M
    NISHIJIMA, M
    MIYAMOTO, N
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 7240 - 7243
  • [2] STRIATIONS IN UNDOPED SEMI-INSULATING LEC GAAS
    NAKAJIMA, M
    KATSUMATA, T
    TERASHIMA, K
    ISHIDA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (01): : L65 - L68
  • [3] COMPENSATION MECHANISM OF UNDOPED SEMI-INSULATING GAAS
    ZHOU, BL
    WU, Z
    CHEN, ZX
    HU, BH
    CHINESE PHYSICS, 1989, 9 (02): : 508 - 510
  • [4] Role of deep-level trapping on the surface photovoltage of semi-insulating GaAs
    Liu, Q
    Ruda, HE
    PHYSICAL REVIEW B, 1997, 55 (16): : 10541 - 10548
  • [5] Role of deep-level trapping on the surface photovoltage of semi-insulating GaAs
    Liu, Q.
    Ruda, H. E.
    Physical Review B: Condensed Matter, 1997, 55 (16):
  • [6] Undoped semi-insulating GaAs epitaxial layers and their characterization
    Imaizumi, T.
    Okazaki, H.
    Yamamoto, H.
    Oda, O.
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [7] UNDOPED SEMI-INSULATING LEC GAAS - A MODEL AND A MECHANISM
    OLIVER, JR
    FAIRMAN, RD
    CHEN, RT
    YU, PW
    ELECTRONICS LETTERS, 1981, 17 (22) : 839 - 841
  • [8] PHOTOCONDUCTIVE CHARACTERIZATION OF UNDOPED, SEMI-INSULATING GAAS CRYSTALS
    MITA, Y
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1391 - 1393
  • [9] Surface photovoltage spectroscopy of semi-insulating GaAs in the 800-1100 nm range
    Sharma, TK
    Kumar, S
    APPLIED PHYSICS LETTERS, 2001, 79 (11) : 1715 - 1717
  • [10] PHOTOCONDUCTIVE CHARACTERIZATION OF UNDOPED, SEMI-INSULATING GaAs CRYSTALS.
    Mita, Yoh
    Journal of Applied Physics, 1985, 57 (04): : 1391 - 1393
12345