Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

被引：3

作者：

Utamuradova Sh.B. ^{[1
]}

Muzafarova S.A. ^{[1
]}

Abdugafurov A.М. ^{[1
]}

Fayzullaev K.M. ^{[1
]}

Naurzalieva E.M. ^{[1
]}

Rakhmanov D.A. ^{[1
]}

机构：

[1] Institute of Semiconductor Physics and Microelectronics, the National University of Uzbekistan 20 Yangi Almazar st., Tashkent

来源：

Utamuradova, Sh.B. (sh-utamuradova@yandex.ru) | 1600年 / ORION Research-and-Production Association卷

关键词：

Dark current; Detector intermediate layer; Energy resolution; Film; Irradiation; Mobility; Radiation; Solid solution; Structure;

D O I：

10.51368/1996-0948-2021-4-81-86

中图分类号：

学科分类号：

摘要：

Based on CdTe and CdZnTe detectors a number of promising devices were created, which found their application in metallurgy, in solving the problems of customs control and control of nuclear materials, as well as matrix detectors created for the manufacture of medical devices and devices for space research. Detectors, created on the basis of polycrystalline semiconductor CdTe and CdZnTe films with a columnar structure on a molybdenum substrate with a thickness d = 30/150 μm, had a specific resistance P > 105108 Ω-cm. The energy resolution of the CdTe and CdZnTe detectors at room temperature reached ~ 5 keV on the 59.6 keV 241Am line. © Утамурадова Ш. Б., Музафарова С. А., Абдугафуров А. М., Файзуллаев К. М., Наурзалиева Э. М., Рахманов Д. А., 2021

引用

页码：81 / 86

页数：5

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