Effect of rapid thermal annealing on oxygen precipitation behavior in silicon wafers

被引：0
|
作者：
机构：
[1] Akatsuka, Masanori
[2] Okui, Masahiko
[3] Morimoto, Nobuyuki
[4] Sueoka, Koji
来源：
Akatsuka, M. | 1600年 / Japan Society of Applied Physics卷 / 40期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Effect of nitrogen doping on the dissolution of oxygen precipitates in Czochralski silicon during rapid thermal annealing
    Wang, HJ
    Ma, XY
    Xu, J
    Yu, XG
    Yang, DR
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (06) : 715 - 719
  • [42] THERMAL ANNEALING OF SILICON-WAFERS FOR INTRINSIC GETTERING
    DARAGONA, FS
    TSUI, RK
    LIAW, HM
    FEJES, PL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : C239 - C239
  • [43] Effect of rapid thermal processing on high temperature oxygen precipitation behaviour in Czochralski silicon wafer
    Ma, XY
    Lin, L
    Tian, DX
    Fu, LM
    Yang, DR
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (21) : 3563 - 3569
  • [44] TEMPERATURE TRANSIENTS OF ION-IMPLANTED SILICON WAFERS DURING RAPID THERMAL ANNEALING.
    Uoochi, Yasuo
    Shioya, Yoshimi
    Maeda, Mamoru
    Journal of the Electrochemical Society, 1987, 134 (08) : 2007 - 2010
  • [45] TEMPERATURE TRANSIENTS OF ION-IMPLANTED SILICON-WAFERS DURING RAPID THERMAL ANNEALING
    UOOCHI, Y
    SHIOYA, Y
    MAEDA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) : 2007 - 2010
  • [46] SENSITIVITY ANALYSIS OF ION-IMPLANTED SILICON-WAFERS AFTER RAPID THERMAL ANNEALING
    KIM, YT
    JUN, CH
    BAEK, JT
    YOO, HJ
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (10) : 1413 - 1417
  • [47] Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation
    Maddalon-Vinante, C.
    Ehret, E.
    Barbier, D.
    Journal of Applied Physics, 1996, 79 (05):
  • [48] CLASSICAL AND RAPID THERMAL-PROCESS EFFECTS ON OXYGEN PRECIPITATION IN SILICON
    MAHFOUD, K
    LOGHMARTI, M
    MULLER, JC
    SIFFERT, P
    JOURNAL DE PHYSIQUE III, 1995, 5 (09): : 1345 - 1351
  • [49] Effects of rapid thermal processing on oxygen precipitation in Czochralski silicon wafer
    Lin, L
    Ma, XY
    Zhong, L
    Yang, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (05) : 630 - 633
  • [50] Control of oxygen precipitates distribution in large-diameter silicon wafers after thermal annealing
    Ono, H
    Ikarashi, T
    Kimura, S
    Tanikawa, A
    Terashima, K
    NEC RESEARCH & DEVELOPMENT, 1996, 37 (04): : 423 - 431
12345