Effect of rapid thermal annealing on oxygen precipitation behavior in silicon wafers

被引:0
|
作者
机构
[1] Akatsuka, Masanori
[2] Okui, Masahiko
[3] Morimoto, Nobuyuki
[4] Sueoka, Koji
来源
Akatsuka, M. | 1600年 / Japan Society of Applied Physics卷 / 40期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers
    Yang, Y
    Chen, H
    Zhou, YQ
    Li, FH
    JOURNAL OF MATERIALS SCIENCE, 1997, 32 (24) : 6665 - 6670
  • [32] Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal
    Wu Lan
    Tong Zhao
    Defan Wu
    Deren Yang
    Xiangyang Ma
    Applied Physics A, 2021, 127
  • [33] Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal
    Lan, Wu
    Zhao, Tong
    Wu, Defan
    Yang, Deren
    Ma, Xiangyang
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (11):
  • [34] The effects of pre-annealing on oxygen precipitation in silicon P/P-epitaxial wafers
    Lee, Kyu Hyung
    Hwang, Don Ha
    Kang, Hee Bog
    Lee, Bo Young
    JOURNAL OF CRYSTAL GROWTH, 2020, 531
  • [35] Formation behavior of oxygen precipitates in silicon wafers subjected to ultra-high-temperature rapid thermal process
    Sudo, Haruo
    Nakamura, Kozo
    Okamura, Hideyuki
    Maeda, Susumu
    Sueoka, Koji
    JOURNAL OF APPLIED PHYSICS, 2022, 131 (05)
  • [36] The effect of patterns on thermal stress during rapid thermal processing of silicon wafers
    Hebb, JP
    Jensen, KF
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1998, 11 (01) : 99 - 107
  • [37] Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon .1. Oxygen precipitation
    MaddalonVinante, C
    Ehret, E
    Barbier, D
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) : 2707 - 2711
  • [38] MULTISTEP REPEATED ANNEALING FOR CZ-SILICON WAFERS - OXYGEN AND INDUCED DEFECT BEHAVIOR
    SHIMURA, F
    TSUYA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2089 - 2095
  • [39] Mechanisms of Oxygen Precipitation in Cz-Si Wafers Subjected to Rapid Thermal Anneals
    Sarikov, Andrey
    Litovchenko, Vladimir
    Lisovskyy, Igor
    Voitovich, Maria
    Zlobin, Sergei
    Kladko, Vasyl
    Slobodyan, Nikolay
    Machulin, Vladimir
    Claeys, Cor
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (08) : H772 - H777
  • [40] INTERSTITIAL CHROMIUM BEHAVIOR IN SILICON DURING RAPID THERMAL ANNEALING
    ZHU, J
    BARBIER, D
    MAYET, L
    GAVAND, M
    CHAUSSEMY, G
    APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 413 - 420