A multi-finger Si1-xGex/Si heterojunction bipolar transistor for wireless power amplifier applications

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作者：
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
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来源：
Pan Tao Ti Hsueh Pao | 2007年 / 4卷 / 496-499期
关键词：
Amplifiers (electronic) - Semiconducting germanium compounds - Semiconducting silicon compounds - Semiconductor device manufacture - Semiconductor device structures;
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摘要：
A large area multi-finger configuration power SiGe HBT device (with an emitter area of about 880μm2) was fabricated with 2μm double-mesa technology. The maximum DC current gain β is 214. The BVCEO is up to 10V, and the BVCBO is up to 16V with a collector doping concentration of 1 × 1017cm-3 and collector thickness of 400nm, The device exhibits a maximum oscillation frequency fmax of 19.3GHz and a cut-off frequency fT of 18.0GHz at a DC bias point of IC = 30mA and VCE = 3V.MSG (maximum stable gain) is 24.5dB, and U (Mason unilateral gain) is 26.6dB at lGHz. Due to the novel distribution layout, no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.
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页码：496 / 499
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