A multi-finger Si1-xGex/Si heterojunction bipolar transistor for wireless power amplifier applications

被引：0

作者：

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ^{[1
]}

机构：

来源：

Pan Tao Ti Hsueh Pao | 2007年 / 4卷 / 496-499期

关键词：

Amplifiers (electronic) - Semiconducting germanium compounds - Semiconducting silicon compounds - Semiconductor device manufacture - Semiconductor device structures;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A large area multi-finger configuration power SiGe HBT device (with an emitter area of about 880μm2) was fabricated with 2μm double-mesa technology. The maximum DC current gain β is 214. The BVCEO is up to 10V, and the BVCBO is up to 16V with a collector doping concentration of 1 × 1017cm-3 and collector thickness of 400nm, The device exhibits a maximum oscillation frequency fmax of 19.3GHz and a cut-off frequency fT of 18.0GHz at a DC bias point of IC = 30mA and VCE = 3V.MSG (maximum stable gain) is 24.5dB, and U (Mason unilateral gain) is 26.6dB at lGHz. Due to the novel distribution layout, no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.

引用

页码：496 / 499

共 50 条

[21] COMPARATIVE-ANALYSIS OF THE HIGH-FREQUENCY PERFORMANCE OF SI/SI1-XGEX HETEROJUNCTION BIPOLAR AND SI BIPOLAR-TRANSISTORS
CHEN, J
GAO, GB
MORKOC, H
SOLID-STATE ELECTRONICS, 1992, 35 (08) : 1037 - 1044
[22] Secondary ion mass spectroscopy ultrashallow depth profiling for Si/Si1-xGex/Si heterojunction bipolar transistors
J Vac Sci Technol B, 1 (287):
[23] Secondary ion mass spectroscopy ultrashallow depth profiling for Si/Si1-xGex/Si heterojunction bipolar transistors
Kruger, D
Kurps, R
Heinemann, B
Herzel, F
Zeindl, HP
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01): : 287 - 293
[24] Selective and non-selective rapid thermal epitaxy of Si/Si1-xGex heterojunction bipolar transistors
King, CA
Johnson, RW
Snyder, CW
Bahnck, D
Cargo, J
Luftman, HS
PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 324 - 329
[25] Modeling and characterization of a strained Si/Si1-xGex transistor with δ-doped layers
Geux, LS
Yamaguchi, K
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1443 - 1448
[26] A designing of heterojunction structure of n-Si/Si1-xGex HEMT
Hu, Y
Han, Q
Zhou, XH
Huang, YX
Xu, YL
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (28-29): : 4215 - 4218
[27] Large signal modelling of a multi-finger heterojunction bipolar transistor for microwave applications based on a genetic algorithm
Garlapati, A
Prasad, S
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 536 - 541
[28] Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains
Sidek, RM
Evans, AGR
Kubiak, RA
ELECTRONICS LETTERS, 1996, 32 (03) : 269 - 270
[29] A NUMERICAL STUDY OF PERFORMANCE POTENTIAL OF SI1-XGEX PSEUDOMORPHIC HETEROJUNCTION BIPOLAR-TRANSISTORS
PEJCINOVIC, B
TANG, TW
LEE, SC
NAVON, DH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 2021 - 2028
[30] Use of narrow collector layers in Si and Si1-xGex bipolar transistors
Leong, WY
Churchill, AC
Robbins, DJ
Lambert, A
THIN SOLID FILMS, 1997, 294 (1-2) : 274 - 277

← 1 2 3 4 5 →