Test of the fluctuation theorem for single-electron transport

被引：0

作者：

Küng, B. ^{[1
]}

Rössler, C. ^{[1
]}

Beck, M. ^{[2
]}

Marthaler, M. ^{[3
]}

Golubev, D.S. ^{[4
]}

Utsumi, Y. ^{[5
]}

Ihn, T. ^{[1
]}

Ensslin, K. ^{[1
]}

机构：

[1] Küng, B.

[2] Rössler, C.

[3] Beck, M.

[4] Marthaler, M.

[5] Golubev, D.S.

[6] Utsumi, Y.

[7] Ihn, T.

[8] Ensslin, K.

来源：

| 1600年 / American Institute of Physics Inc.卷 / 113期

关键词：

Using time-resolved charge detection in a double quantum dot; we present an experimental test of the fluctuation theorem. The fluctuation theorem; a result from nonequilibrium statistical mechanics; quantifies the ratio of occurrence of fluctuations that drive a small system against the direction favored by the second law of thermodynamics. Here; these fluctuations take the form of single electrons flowing against the source-drain bias voltage across the double quantum dot. Our results; covering configurations close to as well as far from equilibrium; agree with the theoretical predictions; when the finite bandwidth of the charge detection is taken into account. In further measurements; we study a fluctuation relation that is a generalization of the Johnson-Nyquist formula and relates the second-order conductance to the voltage dependence of the noise. Current and noise can be determined with the time-resolved charge detection method. Our measurements confirm the fluctuation relation in the nonlinear transport regime of the double quantum dot. © 2013 American Institute of Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Conference article (CA)

引用

共 50 条

[1] Test of the fluctuation theorem for single-electron transport
Kueng, B.
Roessler, C.
Beck, M.
Marthaler, M.
Golubev, D. S.
Utsumi, Y.
Ihn, T.
Ensslin, K.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (13)
[2] Bidirectional single-electron counting and the fluctuation theorem
Utsumi, Y.
Golubev, D. S.
Marthaler, M.
Saito, K.
Fujisawa, T.
Schoen, Gerd
PHYSICAL REVIEW B, 2010, 81 (12)
[3] Single-electron transistor strongly coupled to vibrations: counting statistics and fluctuation theorem
Schaller, Gernot
Krause, Thilo
Brandes, Tobias
Esposito, Massimiliano
NEW JOURNAL OF PHYSICS, 2013, 15
[4] QUANTUM FLUCTUATION EFFECTS IN A SINGLE-ELECTRON BOX
HU, GY
OCONNELL, RF
RYU, JY
PHYSICA B, 1994, 194 : 1021 - 1022
[5] Single-electron transport in nanostructure systems
Barker, JR
Babiker, S
Roy, S
PHYSICA B, 1996, 227 (1-4): : 87 - 91
[6] The effect of large quantum fluctuation on the noise of a single-electron transistor
Utsumi, Y
Imamura, H
Hayashi, M
Ebisawa, H
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 18 (1-3): : 93 - 94
[7] Transport spectroscopy in single-electron tunneling transistors
Haug, RJ
Weis, J
Blick, RH
vonKlitzing, K
Eberl, K
Ploog, K
NANOTECHNOLOGY, 1996, 7 (04) : 381 - 384
[8] Transport characteristics of ferromagnetic single-electron transistors
Weymann, I
Barnas, J
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 236 (03): : 651 - 660
[9] Quantum-fluctuation effects on the thermopower of a single-electron transistor
Kubala, Bjoern
Koenig, Juergen
PHYSICAL REVIEW B, 2006, 73 (19):
[10] Transport measurements in SISNSIS single-electron transistors
Sillanpää, M
Penttilä, JS
Paalanen, MA
Hakonen, PJ
PHYSICA B-CONDENSED MATTER, 2000, 284 (284) : 1826 - 1827

← 1 2 3 4 5 →