Fabrication of high speed 51-stage CMOS/SOI ring oscillators

被引：0

作者：

Xi, Xumei ^{[1
]}

Zhang, Xing ^{[1
]}

Ni, Weihua ^{[1
]}

Yan, Guizhen ^{[1
]}

Wang, Yangyuan ^{[1
]}

机构：

[1] Peking Univ, Beijing, China

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2000年 / 28卷 / 05期

关键词：

Crystal oscillators - MOSFET devices - Silicon on insulator technology;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

CMOS/SOI devices as well as 51-stage ring oscillators with channel design length of 1 μm are fabricated using 4 inch SIMOX wafers. SOI MOSFETs show high saturated current while still remaining the cut-off current very low. Unloaded 51-stage ring oscillators reported here have very good speed performance. Under 5 V supply voltage, the delay per stage reaches 92 ps. These results are attributed to excellent short-channel characteristics as well as low parasitic performance in CMOS/SOI, which verifies that there is significant room for continued performance improvement in scaled CMOS/SOI.

引用

页码：44 / 46

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