Fabrication of high speed 51-stage CMOS/SOI ring oscillators

被引：0

作者：

Xi, Xumei ^{[1
]}

Zhang, Xing ^{[1
]}

Ni, Weihua ^{[1
]}

Yan, Guizhen ^{[1
]}

Wang, Yangyuan ^{[1
]}

机构：

[1] Peking Univ, Beijing, China

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2000年 / 28卷 / 05期

关键词：

Crystal oscillators - MOSFET devices - Silicon on insulator technology;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

CMOS/SOI devices as well as 51-stage ring oscillators with channel design length of 1 μm are fabricated using 4 inch SIMOX wafers. SOI MOSFETs show high saturated current while still remaining the cut-off current very low. Unloaded 51-stage ring oscillators reported here have very good speed performance. Under 5 V supply voltage, the delay per stage reaches 92 ps. These results are attributed to excellent short-channel characteristics as well as low parasitic performance in CMOS/SOI, which verifies that there is significant room for continued performance improvement in scaled CMOS/SOI.

引用

页码：44 / 46

共 50 条

[21] Transients, FFT analysis and Physical design of multi stage Ring Oscillators using 0.3μm CMOS technology
Gupta, Pooja
Choudhary, Sanket
Johari, Ayoush
2018 INTERNATIONAL CONFERENCE ON ADVANCED COMPUTATION AND TELECOMMUNICATION (ICACAT), 2018,
[22] A Universal Test Structure for the Direct Measurement of the Design Margin of Even-Stage Ring Oscillators with CMOS Latch
Hirakawa, Yutaka
Motomura, Ayami
Ota, Kohei
Mimura, Norihiro
Nakamura, Kazuyuki
2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2012, : 18 - 21
[23] A High Speed IC Random Number Generator Based on Phase Noise in Ring Oscillators
Guler, Ulkuhan
Ergun, Salih
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, 2010, : 425 - 428
[24] A NOVEL HIGH-SPEED CMOS FULLY-DIFFERENTICAL RING VCO
Zhang, Changchun
Li, Zhizhen
Fang, Junliang
Zhao, Jiang
Guo, Yufeng
Chen, Jing
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[25] An on-chip high speed serial communication method based on independent ring oscillators
Kimura, S
Hayakawa, T
Horiyama, T
Nakanishi, M
Watanabe, K
2003 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE: DIGEST OF TECHNICAL PAPERS, 2003, 46 : 390 - 391
[26] A low power and high speed CMOS voltage-controlled ring oscillator
Bautista, DP
Aranda, ML
2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 4, PROCEEDINGS, 2004, : 752 - 755
[27] HIGH-SPEED AND LOW-POWER N(+)-P(+) DOUBLE-GATE SOI CMOS
SUZUKI, K
TANAKA, T
TOSAKA, Y
HORIE, H
SUGII, T
IEICE TRANSACTIONS ON ELECTRONICS, 1995, E78C (04) : 360 - 367
[28] A high speed four-stage operational amplifier in 65 nm CMOS
Yi Xie
Zhangming Zhu
Analog Integrated Circuits and Signal Processing, 2016, 86 : 133 - 140
[29] High Speed CMOS Output Stage for Integrated DC-DC Converters
Ng, Wai Tung
Chang, Marian
Yoo, Abraham
Langer, Jiri
Hedquist, Tim
Schweiss, Helmut
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 1901 - +
[30] A high speed four-stage operational amplifier in 65 nm CMOS
Xie, Yi
Zhu, Zhangming
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2016, 86 (01) : 133 - 140

← 1 2 3 4 5 →