Analysis of the I-V characteristic of vanadium oxide thin film

被引：0
|
作者：
Key Laboratory of Electronic Thin Film and Integrated Device, University of Electronic Science and Technology of China, Chengdu 610054, China [1 ]
机构：
来源：
Bandaoti Guangdian | 2008年 / 5卷 / 716-718期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：716 / 718
相关论文
共 50 条
  • [41] Effects of magnetic excitations on the I-V characteristic of magnetic superconductors
    Hruska, M
    Boulaevskii, LN
    COMPTES RENDUS PHYSIQUE, 2006, 7 (01) : 42 - 55
  • [42] Calculating the I-V characteristic of a single-electron diode
    Pogosov V.V.
    Vasyutin E.V.
    Russian Microelectronics, 2007, 36 (02) : 104 - 115
  • [43] Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements
    Kim, Woo Jin
    Kim, Chang Su
    Jo, Sung Jin
    Lee, Sung Won
    Lee, Se Jong
    Baik, Hong Koo
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (01) : H1 - H4
  • [44] Comparison of AC I-V Characteristic of Si and SiC MOSFETs
    Naik, Harsh
    Chow, T. Paul
    2012 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC), 2012,
  • [45] The dynamic nature of peculiarities of RTS static I-V characteristic
    Poltoratsky, EA
    Rychkov, GS
    NANOTECHNOLOGY, 2001, 12 (04) : 556 - 561
  • [46] Fabrication of thin film vanadium oxide for microbolometer
    Chung, CK
    Wu, LH
    Lee, TS
    INTERNATIONAL JOURNAL OF NONLINEAR SCIENCES AND NUMERICAL SIMULATION, 2002, 3 (3-4) : 299 - 302
  • [47] Analysis of I-V Characteristics of Pd/ZnO Thin Film/n-Si Schottky Diodes with Series Resistance
    Somvanshi, Divya
    Jit, Satyabrata
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2014, 9 (01) : 21 - 26
  • [48] I-V characteristics of n-ZnO/poly-Si thin film heterostructure
    Nichev, H.
    Angelov, O.
    Sendova-Vassileva, M.
    Dimova-Malinovska, D.
    7TH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION VOLS 1 AND 2, 2009, 1203 : 600 - 605
  • [49] Simulation Based Analysis of I-V Characteristics of ZnO Thin Film Transistor at Channel Length 40nm
    Sharma, Anchal
    Madhu, Charu
    Singh, Jatinder
    2015 5TH INTERNATIONAL CONFERENCE ON ADVANCED COMPUTING & COMMUNICATION TECHNOLOGIES ACCT 2015, 2015, : 61 - 64
  • [50] I-V characteristics of thin-film gated photocathodes for electron-beam lithography
    Pei, Z
    Berglund, CN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 65 - 70
12345