The dynamic nature of peculiarities of RTS static I-V characteristic

被引:8
|
作者
Poltoratsky, EA [1 ]
Rychkov, GS [1 ]
机构
[1] Sci Res Inst Phys Problems, Moscow 103460, Russia
关键词
D O I
10.1088/0957-4484/12/4/337
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Dynamic properties of the resonant tunnelling structures (RTS) as an example of the dynamic nature of nanoelements are studied. Hysteresis and 'plateaulike' behaviours of the time-averaged current-voltage (I-V) curve of resonant tunnelling structures may be obtained through analysing the high-frequency current oscillations in such structures. Our study shows that 'soft' generation of oscillations leads to the characteristic 'plateaulike' I-V form and 'rigid' generation of oscillations leads to 'hysteresis' I-V behaviour. The analysis is obtained by investigation of the limit cycles of the dynamical system corresponding to the modified equivalent circuit of the RTS developed by Buot and Jensen. In this paper it is clarified that RTS may be used not only as a device for generation of THz oscillations but it may also be used as the dynamic trigger which has two stable states: the stable limit cycle and stable static state.
引用
收藏
页码:556 / 561
页数:6
相关论文
共 50 条
  • [1] ACTIVE I-V CHARACTERISTIC MEASUREMENT
    MANASSE, FK
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1971, IM20 (03) : 177 - &
  • [2] Fast extraction of static parameters of Schottky diodes from forward I-V characteristic
    Prokopyev, AI
    Mesheryakov, SA
    MEASUREMENT, 2005, 37 (02) : 149 - 155
  • [3] I-V characteristic of BJMOSFET based on SOI
    Zeng, Y
    Li, XL
    Zhang, Y
    Zhang, L
    2005 6TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS, BOOKS 1 AND 2, 2005, : 1007 - 1010
  • [4] I-V characteristic and magnetoresistance of homogeneous materials
    Papadopoulos, G. J.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (40-41) : 4206 - 4213
  • [5] The I-V characteristic of resonant tunneling junctions
    Bahlouli, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 179 (02): : 475 - 483
  • [6] I-V characteristic measurement of solar cell
    Vanek, J.
    Kaderka, T.
    13TH INTERNATIONAL CONFERENCE ON ADVANCED BATTERIES, ACCUMULATORS AND FUEL CELLS (ABAF 2012), 2014, 48 (01): : 191 - 197
  • [7] A history of the I-V characteristic of CDW conductors
    Thorne, RE
    JOURNAL DE PHYSIQUE IV, 2005, 131 : 89 - 94
  • [8] I-V characteristic of a truncated parabolic barrier
    Papadopoulos, G. J.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2009, 355 (24-27) : 1376 - 1379
  • [9] Ferroelectric material I-V characteristic measurement system
    Zeng, Yike
    Chen, Gang
    Zhang, Yangyang
    Deng, Chuanyi
    Yu, Dan
    Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument, 2006, 27 (11): : 1365 - 1368
  • [10] Research on I-V temperature characteristic for InSb IRFPA
    Guo Qiang
    Liu Jun-ming
    Wang Wei
    Si Jun-jie
    Wang Jing
    INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2011: ADVANCES IN INFRARED IMAGING AND APPLICATIONS, 2011, 8193