Gain improvement of enhancement-mode AlGaN/GaN high-electron-mobility transistors using dual-gate architecture

被引：0
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作者：
Wang, Ruonan [1 ]
Wu, Yichao [1 ]
Chen, Kevin J. [1 ]
机构：
[1] Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期
关键词：
We demonstrate a dual-gate (DO) AlGaN/GaN high-electron-mobility transistor (HEMT) structure with enhancement-mode (E-mode) operation. The DO device consists of an E-mode gate and a depletion-mode (D-mode) gate instead of the dual D-mode gate electrodes used in previously reported works; thus no negative voltage supply is required when the DO device is used in amplifier circuits. The E-mode DO HEMTs exhibit similar DC characteristics to E-mode single-gate devices but show a 9 dB gain improvement at 2.1 GHz under the same bias conditions. The power gain improvement can be attributed to the higher output impedance and lower feedback capacitance in the DO structure. © 2008 The Japan Society of Applied Physics;
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页码：2820 / 2823
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