Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

被引：16

作者：

He, Yunlong ^{[1
]}

Wang, Chong ^{[1
]}

Mi, Minhan ^{[1
]}

Zhang, Meng ^{[2
]}

Zhu, Qing ^{[2
]}

Zhang, Peng ^{[2
]}

Wu, Ji ^{[1
]}

Zhang, Hengshuang ^{[1
]}

Zheng, Xuefeng ^{[1
]}

Yang, Ling ^{[2
]}

Duan, Xiaoling ^{[1
]}

Ma, Xiaohua ^{[2
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 05期

基金：

中国国家自然科学基金;

关键词：

HEMTS; PERFORMANCE;

D O I：

10.7567/APEX.10.056502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) has been fabricated, by combining nanowire channel (NC) structure fabrication and N2O (or O-2) plasma treatment. A comparison of two NC-HEMTs with different plasma treatments has been made. The NC-HEMT with N2O plasma treatment shows an output current of 610mA/mm and a peak transconductance of 450 mS/mm. The DIBL of the NC-HEMT with N2O plasma treatment is as low as 2mV/V, and an SS of 70mV/decade is achieved. The device exhibits an intrinsic current gain cutoff frequency f(T) of 19GHz and a maximum oscillation frequency f(max) of 58 GHz. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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