Impact of plasma induced damage on the fabrication of 3D NAND flash memory

被引：0
|
作者：
Reiter, Tobias [1 ]
Klemenschits, Xaver [1 ]
Filipovic, Lado [1 ]
机构：
[1] Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, Vienna,1040, Austria
来源：
Solid-State Electronics | 2022年 / 192卷
关键词：
NAND circuits - Flash memory - Plasma applications - Epitaxial growth - Plasma etching;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory
    Lin, Wei-Liang
    Tsai, Wen-Jer
    Cheng, C. C.
    Lu, Chun-Chang
    Ku, S. H.
    Chang, Y. W.
    Wu, Guan-Wei
    Liu, Lenvis
    Hwang, S. W.
    Lu, Tao-Cheng
    Chen, Kuang-Chao
    Tseng, Tseung-Yuen
    Lu, Chih-Yuan
    2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2019,
  • [42] Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory
    Wang, Fei
    Li, Yuan
    Ma, Xiaolei
    Chen, Jiezhi
    IEEE ACCESS, 2021, 9 (09): : 47391 - 47398
  • [43] A High Efficiency All - PMOS Charge Pump for 3D NAND Flash Memory
    Fu, Liyin
    Wang, Yu
    Wang, Qi
    Yang, Shiyang
    Yang, Yan
    Huo, Zongliang
    PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015,
  • [44] Read Retry Mechanism for 3D NAND Flash Memory: Observations, Analyses, and Solutions
    Liao, Han-Yu
    Hsu, Wen-Ling
    Hsieh, Jen-Wei
    Chen, Hung-Pin
    2024 13TH NON-VOLATILE MEMORY SYSTEMS AND APPLICATIONS SYMPOSIUM, NVMSA 2024, 2024, : 49 - 54
  • [45] Effects of Vpass and Vertical Pitch on 3D SONOS NAND Flash Memory Operations
    Lee, Jeongsu
    Lee, Gunwoo
    Sui, Onejae
    Lee, Seung-Beck
    2014 14TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS), 2014,
  • [46] Natural Local Self-Boosting Effect in 3D NAND Flash Memory
    Kang, Myounggon
    Kim, Yoon
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (09) : 1236 - 1239
  • [47] PMOS junction optimization for 3D NAND FLASH memory with CMOS under array
    Liao, Jeng-Hwa
    Ko, Zong-Jie
    Lin, Hsing-Ju
    Hsieh, Jung -Yu
    Yang, Ling-Wu
    Yang, Tahone
    Chen, Kuang-Chao
    Lu, Chih-Yuan
    SOLID-STATE ELECTRONICS, 2023, 202
  • [48] Influence of rapid thermal annealing on the wafer warpage in 3D NAND flash memory
    Li, Qi
    Zhang, Yu
    Zou, Xingqi
    Gao, Jing
    Yang, Chuan
    Ding, Lei
    Wu, Zhipeng
    Li, Na
    Zhang, Sen
    Huo, Zongliang
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (02)
  • [49] Analysis of Cell Current with Abnormal Channel Profile in 3D NAND Flash Memory
    Lee, Jaewoo
    Kim, Yungjun
    Shin, Yoocheol
    Park, Seongjo
    Kang, Daewoong
    Kang, Myounggon
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2024, 24 (02) : 138 - 143
  • [50] Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory
    Lee, Inyoung
    Kim, Dae Hwan
    Kang, Daewoong
    Cho, Il Hwan
    IEEE ACCESS, 2022, 10 : 108067 - 108074
12345