Natural Local Self-Boosting Effect in 3D NAND Flash Memory

被引：43
|
作者：
Kang, Myounggon [1 ]
Kim, Yoon [2 ]
机构：
[1] Korea Natl Univ Transportat, Dept Elect Engn, Chungju 27469, South Korea
[2] Pusan Natl Univ, Plus Nano Fus Technol Div BK21, Dept Nanoenergy Engn, Busan 609735, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
3D NAND flash memory; program inhibit string; self-boosted inhibit scheme; natural local self-booting (NLSB);
D O I：
10.1109/LED.2017.2736541
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter examined the natural local self-boosting effect of an inhibited channel in three-dimensional (3D) NAND flash memory. The inhibited channel in the 3D NAND flash structure can be in the floating state easily, because its channel is not connected directly to its substrate. Despite the application of the global self-boosted program-inhibit scheme, the selected wordline cell is localized automatically during the program pulse application. This phenomenon is analyzed using a computer-aided design simulation, and an analytical model of boosted potential of an inhibited channel in 3D NAND flash memory is proposed.
引用
收藏
页码：1236 / 1239
页数：4
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