Striation Phenomena in a Radio Frequency Capacitively Coupled Plasma for Semiconductor Process

被引：0
|
作者：
Park G. [1 ]
Lee H.J. [1 ]
机构：
[1] Dept. of Electrical Engineering, Pusan National University
来源：
Transactions of the Korean Institute of Electrical Engineers | 2022年 / 71卷 / 02期
关键词：
Capacitively coupled plasmas; Particle-in-cell simulation; Pattern formation; Striation;
D O I：
10.5370/KIEE.2022.71.2.402
中图分类号：
学科分类号：
摘要：
This study provides the conditions and characteristics of a radial striation in a capacitively coupled plasmas, which is caused by self-organized pattern formation. With the variation of the gas pressure and the RF applied voltage, we found that the striation occurs in the parameter space near the breakdown boundary of the glow discharge. By observing the time-averaged plasma parameters, it was found that the striation is triggered by the local non-uniformity of electron heating. The radial electron flux distribution shows a strong shear with the evolving striations. Copyright © 2022 The Korean Institute of Electrical Engineers.
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页码：402 / 405
页数：3
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