Construction of diabatic potential energy surfaces for the SiH2+ system and dynamics studies of the Si+(2P1/2, 3/2) + H2 reaction

The construction of diabatic potential energy surfaces (PESs) for the SiH2+ system, related to the ground (1(2)A ') and excited states (2(2)A '), has been successfully achieved. This was accomplished by utilizing high-level ab initio energy points, employing a neural network fitting method in conjunction with a specifically designed function. The newly constructed diabatic PESs are carefully examined for dynamics calculations of the Si+(P-2(1/2, 3/2)) + H-2 reaction. Through time-dependent quantum wave packet calculations, the reaction probabilities, integral cross sections (ICSs), and differential cross sections (DCSs) of the Si+(P-2(1/2, 3/2)) + H-2 reaction were reported. The dynamics results indicate that the total ICS is in excellent agreement with experimental data within the collision energy range studied. The results also indicate that the SiH+ ion is hardly formed via the Si+(P-2(3/2)) + H-2 reaction. The results from the DCSs suggest that the "complex-forming" reaction mechanism predominates in the low collision energy region. Conversely, the forward abstraction reaction mechanism is dominant in the high collision energy region.