Challenges of high-yield manufacture in micro-light-emitting diodes displays: chip fabrication, mass transfer, and detection

被引:3
|
作者
Yu, Binhai [1 ]
Li, Yong [1 ]
Li, Jiasheng [1 ]
Ding, Xinrui [1 ]
Li, Zongtao [1 ,2 ]
机构
[1] South China Univ Technol, Natl & Local Joint Engn Res Ctr Semicond Display &, Sch Mech & Automot Engn, Guangzhou 510641, Peoples R China
[2] Foshan Nationstar Optoelect Co Ltd, Guangdong Prov Key Lab Semicond Micro Display, Foshan 528000, Peoples R China
基金
中国国家自然科学基金;
关键词
micro-LED; yield; defect; mass transfer; detection; LASER LIFT-OFF; QUANTUM-WELL; LED DISPLAY; PRINTED ASSEMBLIES; HIGH-EFFICIENCY; GAN; GROWTH; GAAS; INTEGRATION; DEPENDENCE;
D O I
10.1088/1361-6463/ad6ce3
中图分类号
O59 [应用物理学];
学科分类号
摘要
Micro-light-emitting diode (micro-LED) is a promising display technology that offers significant advantages, including superior brightness, resolution, contrast, energy consumption, and response speed. It is widely recognized as the next generation of display technology with broad application prospects. However, in the manufacturing process of micro-LED displays, producing high-quality and defect-free micro-LED chips and achieving non-destructive processing throughout the long manufacturing chain pose significant difficulties, causing the low production yield of micro-LED displays and extremely limiting their commercialization. This paper provides an overview of high-yield manufacture of micro-LED displays, targeted to improve the production yield during three key manufacturing processes: chip fabrication, mass transfer, and detection. The factors causing chip defects and key technologies for reducing chip defects in these three manufacturing processes, which are closely related to the production yield of micro-LED displays manufacturing, are discussed. Lastly, the future prospects of micro-LED display technology are highlighted.
引用
收藏
页数:22
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