A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference

被引:0
|
作者
Cheng, Tiedong [1 ]
Gong, Xinlv [1 ]
机构
[1] Jiangxi Univ Sci & Technol, Sch Elect Engn & Automat, Ganzhou 341001, Peoples R China
关键词
Low power; Subthreshold; CMOS voltage reference; Temperature coefficient; REFERENCE CIRCUIT; PSRR; BANDGAP;
D O I
10.1016/j.mejo.2024.106389
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
- A low temperature coefficient (TC), low power subthreshold CMOS voltage reference (CVR) over a wide temperature range is presented in this paper. The proposed circuit employs the voltage difference between the two inputs of the operational amplifier as the proportional to absolute temperature (PTAT) voltage and the complementary to absolute temperature (CTAT) voltage, which is obtained by the Delta V GS of different-threshold transistors biased in the subthreshold region. The proposed CVR was designed in the 0.18-mu m CMOS process with a total area of 0.0049 mm2. 2 . It achieves an average temperature coefficient (TC) of 10.3 ppm/degrees C degrees C over a temperature range of-40 degrees C-120 degrees C, with a TC of 4.9 ppm/degrees C degrees C at the TT corner. The measured power supply rejection ratio (PSRR) is-65 dB at 10 Hz and-30 dB at 1 MHz, while the power consumption is 59 nW at a supply voltage of 1 V. The average line sensitivity (LS) is 0.16 %/V, and the LS is 0.09 %/V at the TT corner.
引用
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页数:8
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