Dual-phase coexistence enables to alleviate resistance drift in phase-change films

被引：0

作者：

Wu, Tong ^{[1
]}

Chen, Chen ^{[1
]}

Zhu, Jinyi ^{[1
]}

Wang, Guoxiang ^{[1
,2
]}

Dai, Shixun ^{[1
,2
]}

机构：

[1] Ningbo Univ, Res Inst Adv Technol, Lab Infrared Mat & Devices, Ningbo 315211, Peoples R China

[2] Ningbo Univ, Inst Ocean Engn, Ningbo 315211, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2024年 / 45卷 / 07期

基金：

中国国家自然科学基金;

关键词：

phase change films; X-ray methods; resistance drift; optical band gap; CHANGE MEMORY;

D O I：

10.1088/1674-4926/24040013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge2Sb2Te5 (GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.

引用

页数：5

共 50 条

[41] Optical transition of chalcogenide phase-change thin films
Yao, HB
Shi, LP
Chong, TC
Tan, PK
Miao, XS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2B): : 828 - 831
[42] Optical transition of chalcogenide phase-change thin films
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (2 B): : 828 - 831
[43] Nucleation of AgInSbTe films employed in phase-change media
Ziegler, Stefan
Wuttig, Matthias
Journal of Applied Physics, 2006, 99 (06):
[44] Nanoscale electrolytic switching in phase-change chalcogenide films
Pandian, Ramanathaswamy
Kooi, Bart J.
Palasantzas, George
De Hosson, Jeff T. M.
Pauza, Andrew
ADVANCED MATERIALS, 2007, 19 (24) : 4431 - +
[45] Phase-Change Memories
不详
MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK, 2008, 39 (11) : A1 - A1
[46] Phase-change materials
Air Liquide America Corp, South Plainfield, United States
Heat Transfer Eng, 2 (72-74):
[47] Time for a Phase-change
不详
POLYMERS FOR ADVANCED TECHNOLOGIES, 2008, 19 (12) : A3 - A3
[48] Phase-change materials
Fleury, AF
HEAT TRANSFER ENGINEERING, 1996, 17 (02) : 72 - 74
[49] Phase-change memories
Bez, R
Pirovano, A
Pellizzer, F
MATERIALS FOR INFORMATION TECHNOLOGY: DEVICES, INTERCONNECTS AND PACKAGING, 2005, : 177 - 188
[50] Phase-change memory
Eiichi Kuramochi
Masaya Notomi
Nature Photonics, 2015, 9 : 712 - 714

← 1 2 3 4 5 →