High-precision single-event transient hardened comparator with the sensitive node transient detection feedback latch technique

被引:0
|
作者
Xie, Yuqiao [1 ,2 ]
Xu, Tao [1 ,2 ]
Liu, Zhongyang [1 ,2 ]
Qiu, Guoji [1 ,2 ]
Bi, Dawei [1 ]
Hu, Zhiyuan [1 ]
Zhang, Zhengxuan [1 ]
Zou, Shichang [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Mat Integrated Circuits, 865 Changning Rd, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
关键词
analog; comparator; radiation hardening; single-event transient (SET); sensitive node transient detection feedback latch (SNTDFL); triple modular redundancy (TMR); ANALOG; CHARGE; ION; COLLECTION; DESIGN; UPSETS; IMPACT; ICS;
D O I
10.1002/cta.4187
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper comprehensively perfects the sensitive node transient detection feedback latch (SNTDFL) technique, subsequently conceptualizes an ideal hardening structure for the pre-amplification stage, and proposes a radiation hardened by design (RHBD) strategy to cope with the severe single-event transient (SET) effects of high-precision voltage comparators in a space radiation environment. Analysis and verification results show that the hardening strategy exhibits excellent SET hardening performance, which can not only detect extremely small transient voltage disturbances at sensitive nodes but also effectively resist transient current pulses of various intensities generated by SETs. Compared with an unhardened high-precision comparator, the proposed one, hardened with a hybrid strategy of SNTDFL and triple modular redundancy (TMR) techniques, can greatly preserve the original electrical properties and remarkably improve the tolerance of SET with little overhead. In addition, the proposed high-precision comparator significantly reduces static power consumption compared with the one hardened with the TMR technique alone and has a smaller area overhead. This paper comprehensively perfects the sensitive node transient detection feedback latch (SNTDFL) technique, conceptualizes an ideal hardening structure for the pre-amplification stage, and proposes a high-precision comparator hardened with a hybrid strategy of SNTDFL and triple modular redundancy (TMR) techniques. This strategy not only greatly preserves the electrical characteristics but also detects extremely small transient voltage disturbances caused at sensitive nodes and effectively resists transient current pulses of various intensities, remarkably improving the comparator's tolerance to SET. image
引用
收藏
页数:14
相关论文
共 50 条
  • [1] A novel high-precision single-event transient hardened voltage comparator design
    Xie, Yuqiao
    Liu, Zhongyang
    Xu, Tao
    Bi, Dawei
    Hu, Zhiyuan
    Zhang, Zhengxuan
    Zou, Shichang
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2023, 51 (10) : 4864 - 4878
  • [2] A single-event transient hardened LDO regulator with built-in filter
    Duan, Zhikui
    Ding, Yi
    Lu, Chong
    Zhao, Zhenyu
    Hu, Jianguo
    Tan, Hongzhou
    IEICE ELECTRONICS EXPRESS, 2015, 12 (22):
  • [3] Investigation of A Layout Technique for Single-Event Transient Mitigation
    Luo Sheng
    He Wei
    Zhang Zhun
    He Lingxiang
    Cao Jianmin
    Wu Qingyang
    2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 1191 - 1193
  • [4] Application determinance of single-event transient characteristics in the LM111 comparator
    Sternberg, AL
    Massengill, LW
    Schrimpf, RD
    Calvel, P
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 1855 - 1858
  • [5] A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs
    赵振宇
    张民选
    陈书明
    陈吉华
    李俊丰
    半导体学报, 2009, 30 (12) : 108 - 112
  • [6] A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs
    Zhao Zhenyu
    Zhang Minxuan
    Chen Shuming
    Chen Jihua
    Li Junfeng
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (12)
  • [7] A Single-Event Latchup setup for high-precision AMS circuits
    Leger, G.
    Gines, A.
    Peralias, E.
    Gutierrez, V.
    Dominguez, C.
    Jalon, M. A.
    Carranza, L.
    2023 IEEE EUROPEAN TEST SYMPOSIUM, ETS, 2023,
  • [8] Sensitive region of single-event transient in 22 nm FDSOI devices
    Zhang B.
    Liang B.
    Liu X.
    Fang Y.
    Guofang Keji Daxue Xuebao/Journal of National University of Defense Technology, 2024, 46 (02): : 146 - 152
  • [9] Single-event transient effects on dynamic comparator in 28 nm FDSOI CMOS technology
    Maciel, N.
    Marques, E. C.
    Naviner, L. A. B.
    Cai, H.
    MICROELECTRONICS RELIABILITY, 2018, 88-90 : 965 - 968
  • [10] Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology
    Ildefonso, Adrian
    Lourenco, Nelson E.
    Fleetwood, Zachary E.
    Wachter, Mason T.
    Tzintzarov, George N.
    Cardoso, Adilson S.
    Roche, Nicolas J. -H.
    Khachatrian, Ani
    McMorrow, Dale
    Buchner, Stephen P.
    Warner, Jeffrey H.
    Paki, Pauline
    Kaynak, Mehmet
    Tillack, Bernd
    Cressler, John D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 89 - 96