Synthesis of silicon carbide thin film as a source for white light emission

Synthesis of doped silicon carbide (SiC) thin film on silicon (111) wafer was carried out employing chemical vapour deposition (CVD) technique using boron-doped liquid polycarbosilane (LPCS) as polymer precursor under inert atmosphere of argon and nitrogen gas. The present study investigated the physical and optical properties of fabricated SiC thin films by varying doping concentrations. Subsequent analysis of bonds and phases by Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy and X-ray diffraction (XRD) affirm the formation of Si-C, Si-N and unique silicon carbonitride (SiC-N). Stable photoluminescence has been observed across the entire visible spectra with enhanced quantum efficiency and lifetime, which ensures its application in opto-electronic devices such as LED.