Synthesis of silicon carbide thin film as a source for white light emission

被引：0

作者：

Kar, Ajitesh ^{[1
]}

Kundu, Kusumita ^{[1
]}

Kumar, Suresh ^{[2
]}

Banerjee, Rajat ^{[1
]}

Chattopadhyay, Himadri ^{[3
]}

机构：

[1] CSIR, Adv Ceram & Composites Div ACCD, Cent Glass & Ceram Res Inst, CG &CRI, 196 Raja SC Mullick Rd, Kolkata 700032, India

[2] Def Mat & Stores Res & Dev Estab, GT Rd, Kanpur 208013, India

[3] Jadavpur Univ, Dept Mech Engn, 188 Raja SC Mullick Rd, Kolkata 700032, India

来源：

OPTICAL MATERIALS | 2024年 / 155卷

关键词：

White light; Silicon carbide; Thin film; CVD; Photoluminescence; CHEMICAL-VAPOR-DEPOSITION; PHOTOLUMINESCENCE PROPERTIES; EMITTING-DIODES; OPTICAL-PROPERTIES; LIQUID POLYCARBOSILANE; BONDING PROPERTIES; CARBON FILMS; SIC FILMS; H FILMS; TEMPERATURE;

D O I：

10.1016/j.optmat.2024.115795

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Synthesis of doped silicon carbide (SiC) thin film on silicon (111) wafer was carried out employing chemical vapour deposition (CVD) technique using boron-doped liquid polycarbosilane (LPCS) as polymer precursor under inert atmosphere of argon and nitrogen gas. The present study investigated the physical and optical properties of fabricated SiC thin films by varying doping concentrations. Subsequent analysis of bonds and phases by Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy and X-ray diffraction (XRD) affirm the formation of Si-C, Si-N and unique silicon carbonitride (SiC-N). Stable photoluminescence has been observed across the entire visible spectra with enhanced quantum efficiency and lifetime, which ensures its application in opto-electronic devices such as LED.

引用

页数：10

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