Low-Loss Buried InGaAs/InP Integrated Waveguides in the Long-Wave Infrared

被引：1
|
作者：
Montesinos-Ballester, Miguel [1 ]
Jochl, Elsa [1 ]
Turpaud, Victor [2 ]
Hillbrand, Johannes [1 ]
Bertrand, Mathieu [1 ]
Marris-Morini, Delphine [2 ]
Gini, Emilio [1 ]
Faist, Jerome [1 ]
机构：
[1] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[2] Ctr Nanosci & Nanotechnol C2N, Univ Paris Saclay, CNRS, Palaiseau, France
来源：
ACS PHOTONICS | 2024年 / 11卷 / 06期
关键词：
low losses; passive waveguides; buried waveguides; mid-infrared waveguides; photonicintegrated circuits; QUANTUM CASCADE LASERS; SILICON; PHOTONICS; INP;
D O I：
10.1021/acsphotonics.3c01898
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we present a photonic integrated platform based on buried InGaAs waveguides with InP cladding that operates over a large mid-infrared (mid-IR) spectral range. Thanks to wet-etch fabrication patterning and Fe doping, low propagation losses below 1.2 dB/cm (0.3 cm(-1) loss coefficient) have been obtained between 4.6 and 11.2 mu m wavelengths (890-1960 cm(-1) wavenumber), in both transverse electric (TE) and transverse magnetic (TM) polarization modes. The possibility of monolithically integrating such waveguides with mid-IR sources offers promising perspectives for developing broadband, homogeneously integrated systems.
引用
收藏
页码：2236 / 2241
页数：6
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