Low-Loss Buried InGaAs/InP Integrated Waveguides in the Long-Wave Infrared

被引：1

作者：

Montesinos-Ballester, Miguel ^{[1
]}

Jochl, Elsa ^{[1
]}

Turpaud, Victor ^{[2
]}

Hillbrand, Johannes ^{[1
]}

Bertrand, Mathieu ^{[1
]}

Marris-Morini, Delphine ^{[2
]}

Gini, Emilio ^{[1
]}

Faist, Jerome ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

[2] Ctr Nanosci & Nanotechnol C2N, Univ Paris Saclay, CNRS, Palaiseau, France

来源：

ACS PHOTONICS | 2024年 / 11卷 / 06期

关键词：

low losses; passive waveguides; buried waveguides; mid-infrared waveguides; photonicintegrated circuits; QUANTUM CASCADE LASERS; SILICON; PHOTONICS; INP;

D O I：

10.1021/acsphotonics.3c01898

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we present a photonic integrated platform based on buried InGaAs waveguides with InP cladding that operates over a large mid-infrared (mid-IR) spectral range. Thanks to wet-etch fabrication patterning and Fe doping, low propagation losses below 1.2 dB/cm (0.3 cm(-1) loss coefficient) have been obtained between 4.6 and 11.2 mu m wavelengths (890-1960 cm(-1) wavenumber), in both transverse electric (TE) and transverse magnetic (TM) polarization modes. The possibility of monolithically integrating such waveguides with mid-IR sources offers promising perspectives for developing broadband, homogeneously integrated systems.

引用

页码：2236 / 2241

页数：6

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