Anomalous Hot carrier injection induced degradation of drain current in High-Voltage NMOS with Shallow Trench Isolation

被引：0
|
作者：
Zhao, Bocheng [1 ,2 ]
Tian, Zhi [2 ]
Wang, Qiwei [2 ]
Zhang, Jianhua [1 ]
机构：
[1] Shanghai Univ, Sch Microelect, 20 Chengzhong Rd,Jiading Area, Shanghai, Peoples R China
[2] Shanghai Huali Microelect Corp, 6 Liangteng Rd,Pudong New Area, Shanghai, Peoples R China
来源：
CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年
关键词：
HVMOS; HCI; STI; Device degradation; Kirk effect; STRESS;
D O I：
10.1109/CSTIC61820.2024.10531943
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In 25V High-Voltage NMOS manufactured by 28nm High-K Metal Gate (HKMG) process, the first peak of Isub appears at Vg=6.7V. Due to the hot carrier injection (HCI, stress condition @Vg=6.7V, Vd=27.5V), the linear current Idlin (Vd=0.05V) firstly increases and then decreases with time when the gate voltage Vg is low (<4V), and Idlin monotonously decreases when Vg is high (>4V), which is different from previous research. Under a certain stress time, the degradation of drain current (Vg=25V) is the largest when Vd=4.5V. Two competing mechanisms were proposed to explain the maximum degradation at Vd=4.5V. The mechanisms above were confirmed utilizing TCAD simulation and were integrated in manufacturing process. The obtained results confirmed the presume and helped to study and improve the HCI reliability.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET
    Fang, Dong
    Lin, Zhiyu
    Xiao, Kui
    Qiao, Ming
    Bian, Zheng
    Liu, Wenliang
    Yang, Guang
    Ye, Jun
    Zhang, Sen
    Zhang, Bo
    2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2022, : 141 - 144
  • [42] Mechanisms of Hot-Carrier-Induced Threshold-Voltage Shift in High-Voltage p-Type LDMOS Transistors
    Chen, Jone F.
    Tian, Kuen-Shiuan
    Chen, Shiang-Yu
    Wu, Kuo-Ming
    Shih, J. R.
    Wu, Kenneth
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (12) : 3203 - 3206
  • [43] Effect of gate voltage on hot-carrier-induced on-resistance degradation in high-voltage n-type lateral diffused metal-oxide-semiconductor transistors
    Chen, Shiang-Yu
    Chen, Jone F.
    Wu, Kuo-Ming
    Lee, J. R.
    Liu, C. A.
    Hsu, S. L.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2645 - 2649
  • [44] Quantitative investigation of hot carrier induced drain current degradation in submicron drain-engineered metal-oxide-semiconductor field-effect-transistors
    Yang, JJ
    Chung, SSS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9A): : 5285 - 5289
  • [45] High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability
    He, Yandong
    Zhang, Ganggang
    Zhang, Xing
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
  • [46] Quantitative Investigation of hot carrier induced drain current degradation in submicron drain-engineered metal-oxide-semiconductor field-effect-transistors
    Yang, Jiuun-Jer
    Chung, Steve Shao-Shiun
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (9 A): : 5285 - 5289
  • [47] Anomalous increase in hot-carrier-induced threshold voltage shift in n-type drain extended metal-oxide-semiconductor transistors
    Chen, Jone F.
    Chen, Shiang-Yu
    Lee, J. R.
    Wu, Kuo-Ming
    Huang, Tsung-Yi
    Liu, C. M.
    APPLIED PHYSICS LETTERS, 2008, 92 (11)
  • [48] Substrate current and hot-carrier-injection in high voltage asymmetrical N-channel MOS transistor technology
    Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    不详
    不详
    Pan Tao Ti Hsueh Pao, 2008, 4 (757-764):
  • [49] A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's
    Wang, TH
    Chiang, LP
    Zous, NK
    Hsu, CF
    Huang, LY
    Chao, TS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (09) : 1877 - 1882
  • [50] Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs
    Rafi, J. M.
    Simoen, E.
    Hayama, K.
    Mercha, A.
    Campabadal, F.
    Ohyama, H.
    Claeys, C.
    MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1657 - 1663
12345