Anomalous Hot carrier injection induced degradation of drain current in High-Voltage NMOS with Shallow Trench Isolation

被引：0

作者：

Zhao, Bocheng ^{[1
,2
]}

Tian, Zhi ^{[2
]}

Wang, Qiwei ^{[2
]}

Zhang, Jianhua ^{[1
]}

机构：

[1] Shanghai Univ, Sch Microelect, 20 Chengzhong Rd,Jiading Area, Shanghai, Peoples R China

[2] Shanghai Huali Microelect Corp, 6 Liangteng Rd,Pudong New Area, Shanghai, Peoples R China

来源：

CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年

关键词：

HVMOS; HCI; STI; Device degradation; Kirk effect; STRESS;

D O I：

10.1109/CSTIC61820.2024.10531943

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

In 25V High-Voltage NMOS manufactured by 28nm High-K Metal Gate (HKMG) process, the first peak of Isub appears at Vg=6.7V. Due to the hot carrier injection (HCI, stress condition @Vg=6.7V, Vd=27.5V), the linear current Idlin (Vd=0.05V) firstly increases and then decreases with time when the gate voltage Vg is low (<4V), and Idlin monotonously decreases when Vg is high (>4V), which is different from previous research. Under a certain stress time, the degradation of drain current (Vg=25V) is the largest when Vd=4.5V. Two competing mechanisms were proposed to explain the maximum degradation at Vd=4.5V. The mechanisms above were confirmed utilizing TCAD simulation and were integrated in manufacturing process. The obtained results confirmed the presume and helped to study and improve the HCI reliability.

引用

页数：3

共 50 条

[31] Hot-electron-induced degradation in high-voltage submicron DMOS transistors
Manzini, S
Contiero, C
ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS, 1996, : 65 - 68
[32] Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region
Novoselov A.S.
Masalskii N.V.
Russian Microelectronics, 2023, 52 (05) : 411 - 418
[33] HOT-CARRIER-INDUCED DEGRADATIONS AND OPTIMIZATIONS FOR LATERAL DMOS TRANSISTOR WITH SHALLOW TRENCH ISOLATION AND STEP OXIDE IMPROVEMENT
Liu, Zhibo
Chen, Tian
Li, Kui
Kan, Bo
Xiao, Li
Wang, Li
Chen, Hualun
CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC, 2024,
[34] Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors
Chen, Jone F.
Chen, Shiang-Yu
Wu, Kuo-Ming
Shih, J. R.
Wu, Kenneth
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (11) : 2843 - 2847
[35] Simulation and verification of the hot carrier degradation behavior in an analog high-voltage device with graded channel profile
Thoma, R
Zhao, H
Martin, M
Kyono, C
PHYSICA B-CONDENSED MATTER, 2002, 314 (1-4) : 396 - 399
[36] A model with temperature-dependent exponent for hot-carrier injection in high-voltage nMOSFETs involving hot-hole injection and dispersion
Dai, Mingzhi
Gao, Chao
Yap, Kinleong
Shan, Yi
Cao, Zigui
Liao, Kuangyang
Wang, Liang
Cheng, Bo
Liu, Shaohua
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (05) : 1255 - 1258
[37] A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs
Chen, JF
Tsao, CP
PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2002, : 31 - 34
[38] Investigation of Hot-Carrier-Injection Assisted TDDB and Multi-Stage Hot-Hole Induced Leakage Current in BCD HV NMOS
Huang, Yu-Hui
Chen, C. -L.
Lee, Y. -H.
Yang, C. -Y.
Su, P. -C.
Ho, David
Chou, H. -L.
Wang, Z. -Y.
Wang, Jesse
Lu, H. -T.
Jong, Y. -C.
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2017,
[39] EFFECTS OF HIGH-FIELD INJECTION ON THE HOT-CARRIER-INDUCED DEGRADATION OF SUBMICROMETER PMOSFETS
ZHANG, JF
ECCLESTON, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) : 1269 - 1276
[40] A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET
Dai, M. Z.
Kim, S. I.
Yap, Andrew
Liu, Shaohua
Cheng, Arthur
Yi, Leeward
MICROELECTRONICS RELIABILITY, 2008, 48 (04) : 504 - 507

← 1 2 3 4 5 →