Innovative approaches for 3D metrology and defect analysis on advanced packaging structures

被引：0
|
作者：
Wu, Ivy [1 ]
Mullen, Melissa [1 ]
McClendon, Mark [1 ]
Carleso, Pete [1 ]
Gu, Xiaoting [1 ]
Wu, Mary [1 ]
机构：
[1] Thermo Fisher Sci, Hillsboro, OR 97124 USA
来源：
2024 35TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, ASMC | 2024年
关键词：
advanced packaging; metrology; high bandwidth memory (HBM); plasma focused ion beam (PFIB); scanning electron microscope (SEM); through-silicon-via (TSV);
D O I：
10.1109/ASMC61125.2024.10545504
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
With the rapid growth of advanced packaging technology, the task of conducting metrology and defect analysis on new packaging structures becomes more complex and demanding. This paper will present innovative approaches for conducting three-dimensional (3D) metrology and defect analysis on a high bandwidth memory (HBM) structure using a wafer-level plasma focused ion beam (PFIB) and scanning electron microscope (SEM) DualBeam system.
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页数：5
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