Fabrication of high power 1.5 μm wavelength InGaAsP/InP BH lasers having dilute waveguide structure

被引：1
|
作者：
Guo, Jing [1 ,2 ,3 ]
Li, Huan [1 ,2 ,3 ]
Xiong, Xinkai [1 ,2 ,3 ]
Zhou, Daibing [1 ,2 ,3 ]
Zhao, Linhgjuan [1 ,2 ,3 ]
Liang, Song [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Key Lab Optoelect Mat & Devices, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
来源：
OPTICS EXPRESS | 2024年 / 32卷 / 12期
基金：
中国国家自然科学基金;
关键词：
DFB LASER;
D O I：
10.1364/OE.517994
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
1.5 mu m wavelength high power buried heterojunction (BH) semiconductor lasers having dilute waveguide structure have been fabricated. The optical field is dragged down toward the n side of the device by the dilute waveguide layer, lowering the optical confinement factor of the p doped material and active material, which helps to enlarge the laser output light power. Compared with thick InGaAsP cladding layer, the dilute waveguide material is easy to be grown and has higher thermal conductivity. The slope efficiency of the obtained dilute waveguide BH lasers is notably higher than that of the BH lasers having no dilute waveguide. Our studies show that the dilute waveguide structure is promising for the fabrication of high power BH lasers. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码：21663 / 21670
页数：8
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