High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4 epilayers with high temperature functionality

This work reports on the fabrication of excellent quality deep ultraviolet photodetectors (DUV PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa2O4 thin films on c-plane sapphire. Herein, The DUV PDs by exhibiting an ultra-low dark current of 6.69 fA and a high photo-to-dark-current ratio (PDCR) of >10(8) at a low-power operation of 0.2 V. While PDCR reached more than 10(9) on applied bias of 10 V having extremely low dark current of 37 fA. The detector revealed an ultra-high responsivity of 185 and 3.53 A/W under the exposure of 107 mu W/cm(2) of 245 nm wavelength at room temperature (RT) and applied bias of 10 and 0.2 V, respectively, and exhibited the record-high detectivity of the order of 10(17) Jones. The temperature-dependent operation remained stable across a wide temperature range, from 27 degrees C to 125 degrees C, maintaining ultra-low dark current. The nearly constant growth and decay time of DUV PDs throughout the temperature range emphasizes the robustness and reliability of PD. The ideality factor in both DUV and dark conditions nearing unity proves the dominance of the thermionic emission mechanism. Also shows the stable and slight improved performance after a year. Therefore, these findings suggest that ZnGa2O4 is a strong contender for deep UV detection that shows robustness even at high temperatures.