Research on Integrated Trench Etching for Trench-Type Power MOSFET

In the manufacturing process of trench-type metal-oxide-semiconductor field-effect transistor (MOSFET), trench etching is a crucial step that directly influences subsequent processes such as gate oxidation, polysilicon deposition, and the final device performance. This research elucidates the process challenges encountered during the development of the integrated trench etching process, including tapered trench morphology, microtrenches, incomplete resist stripping, and insufficient etch selectivity. Through adjustments to process parameters such as pressure, power, gas composition, and gas ratios, the study successfully addressed the challenges. The insights from this research may provide inspiration for the improvement of trench etching steps in other power devices.