Effects of 50keV and 100keV Proton Irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells

被引：0
|
作者：
王荣 [1 ,2 ,3 ]
冯钊 [1 ,2 ]
刘运宏 [1 ,2 ]
鲁明 [1 ,2 ]
机构：
[1] Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal University
[2] College of Nuclear Science and Technology,Beijing Normal University
[3] Beijing Radiation
来源：
Plasma Science and Technology | 2012年 / 07期
关键词：
D O I：
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中图分类号：
TM914.4 [太阳能电池];
学科分类号：
摘要：
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10 10cm-2,1 × 10 11cm-2,1 × 10 12cm-2,and 1 × 10 13cm-2.Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements,and then the changes in I sc,V oc,P max and the spectral response of the cells are observed as functions of proton irradiation fluence and energy.The results show that the spectral response of the top cell degrades more significantly than that of the middle cell,and 100 keV proton-induced degradation rates of I sc,V oc and P max are larger compared with 50 keV proton irradiation.
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页码：647 / 649
页数：3
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