Effects of 50keV and 100keV Proton Irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells

被引：0
|
作者：
王荣 [1 ,2 ,3 ]
冯钊 [1 ,2 ]
刘运宏 [1 ,2 ]
鲁明 [1 ,2 ]
机构：
[1] Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal University
[2] College of Nuclear Science and Technology,Beijing Normal University
[3] Beijing Radiation
来源：
Plasma Science and Technology | 2012年 / 07期
关键词：
D O I：
暂无
中图分类号：
TM914.4 [太阳能电池];
学科分类号：
摘要：
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10 10cm-2,1 × 10 11cm-2,1 × 10 12cm-2,and 1 × 10 13cm-2.Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements,and then the changes in I sc,V oc,P max and the spectral response of the cells are observed as functions of proton irradiation fluence and energy.The results show that the spectral response of the top cell degrades more significantly than that of the middle cell,and 100 keV proton-induced degradation rates of I sc,V oc and P max are larger compared with 50 keV proton irradiation.
引用
收藏
页码：647 / 649
页数：3
相关论文
共 50 条
  • [21] Degradation model of the orbiting current for GaInP/GaAs/Ge triple-junction solar cells used on satellite
    Meng, Jieru
    Feng, Jing
    Sun, Quan
    Pan, Zhengqiang
    Liu, Tianyu
    SOLAR ENERGY, 2015, 122 : 464 - 471
  • [22] Effect of GaInP lattice microstructure on the AlGaAs/GaInP tunneling diode in GaInP/GaAs/Ge triple-junction solar cell
    Zhang, Wei
    Zhang, Mengyan
    Chen, Mingbo
    Jiang, Depeng
    Wang, Liangxing
    PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007: SOLAR ENERGY AND HUMAN SETTLEMENT, VOLS I-V, 2007, : 996 - 999
  • [23] Research on the emitter thickness optimization of GaInP/GaAs/Ge triple-junction solar cell under space proton irradiation based on TCAD simulation
    Li, Junwei
    Wang, Jintao
    Shi, Chengying
    Wang, Zujun
    Xue, YuanYuan
    AIP ADVANCES, 2020, 10 (11)
  • [24] 50-170 keV proton irradiation on spectral response in GaAs/Ge space solar cell
    Harbin Institute of Technology, Harbin 150001, China
    不详
    He Jishu, 2008, 1 (31-34):
  • [25] Effect of Alpha-Particle Irradiation on InGaP/GaAs/Ge Triple-Junction Solar Cells
    Xu, Jing
    Guo, Min
    Lu, Ming
    He, Hu
    Yang, Guang
    Xu, Jianwen
    MATERIALS, 2018, 11 (06):
  • [26] The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells
    Cotal, HL
    King, RR
    Haddad, M
    Ermer, JH
    Karam, NH
    Krut, DD
    Joslin, DE
    Takahashi, M
    Cavicchi, BT
    CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 1316 - 1319
  • [27] Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells
    Leem, Jung Woo
    Yu, Jae Su
    Kim, Jong Nam
    Noh, Sam Kyu
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (10) : 1561 - 1565
  • [28] InGaP/GaAs/Ge triple-junction solar cells with ZnO nanowires
    Hou, Jei-Li
    Chang, Shoou-Jinn
    Hsueh, Ting-Jen
    Wu, Chih-Hung
    Weng, Wen-Yin
    Shieh, Jia-Min
    PROGRESS IN PHOTOVOLTAICS, 2013, 21 (08): : 1645 - 1652
  • [29] METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY
    Dimroth, F.
    Guter, W.
    Schoene, J.
    Welser, E.
    Steiner, M.
    Oliva, E.
    Wekkeli, A.
    Siefer, G.
    Philipps, S. P.
    Bett, A. W.
    2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 1933 - 1937
  • [30] Effect of 150 keV proton irradiation on the performance of GaAs solar cells
    Yan, Yuanyuan
    Fang, Meihua
    Tang, Xiaobin
    Chen, Feida
    Huang, Hai
    Sun, Xiangyu
    Ji, Lulu
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 451 : 49 - 54
12345