INVOLVEMENT OF OXYGEN-VACANCY DEFECTS IN ENHANCING OXYGEN DIFFUSION IN SILICON

被引：42
|
作者：
OATES, AS [1 ]
NEWMAN, RC [1 ]
机构：
[1] JJ THOMSON PHYS LAB,READING RG6 2AF,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 05期
关键词：
D O I：
10.1063/1.97190
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：262 / 264
页数：3
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