INVOLVEMENT OF OXYGEN-VACANCY DEFECTS IN ENHANCING OXYGEN DIFFUSION IN SILICON

被引：42
|
作者：
OATES, AS [1 ]
NEWMAN, RC [1 ]
机构：
[1] JJ THOMSON PHYS LAB,READING RG6 2AF,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 05期
关键词：
D O I：
10.1063/1.97190
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：262 / 264
页数：3
相关论文
共 50 条
  • [31] OPTICAL-PROPERTIES OF OXYGEN-VACANCY DEFECTS IN ALKALINE-EARTH FLUORIDE-CRYSTALS
    RADZHABOV, E
    FIGURA, P
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 186 (01): : K37 - K40
  • [32] Negative U-properties of the oxygen-vacancy in ZnO
    Pfisterer, D
    Sann, J
    Hofmann, DM
    Meyer, B
    Frank, T
    Pensl, G
    Tena-Zaera, R
    Zúñiga-Pérez, J
    Martinez-Tomas, C
    Muñoz-Sanjosé, V
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04): : 997 - +
  • [33] Diffusion and dissociation mechanisms of vacancy-oxygen complex in silicon
    Furuhashi, M
    Taniguchi, K
    APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3
  • [34] Local vibrational modes of the oxygen-vacancy complex in germanium
    V. V. Litvinov
    L. I. Murin
    J. L. Lindstrom
    V. P. Markevich
    A. N. Petukh
    Semiconductors, 2002, 36 : 621 - 624
  • [35] Cathodoluminescence of oxygen-vacancy centers in structures of aluminum nitride
    Spiridonov D.M.
    Weinstein I.A.
    Vokhmintsev A.S.
    Beketov A.R.
    Bulletin of the Russian Academy of Sciences: Physics, 2015, 79 (2) : 211 - 214
  • [36] Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics
    Scott, JF
    Dawber, M
    APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3801 - 3803
  • [37] IR studies of oxygen-vacancy defects in electron-irradiated Ge-doped Si
    Londos, C. A.
    Andrianakis, A.
    Aliprantis, D.
    Ohyama, H.
    Emtsev, V. V.
    Oganesyan, G. A.
    PHYSICA B-CONDENSED MATTER, 2007, 401 : 487 - 490
  • [38] Formation and diffusion of oxygen-vacancy pairs on TiO2(110)-(1 x 1)
    Cui, Xuefeng
    Wang, Bing
    Wang, Zhuo
    Huang, Tian
    Zhao, Yan
    Yang, Jinlong
    Hou, J. G.
    JOURNAL OF CHEMICAL PHYSICS, 2008, 129 (04):
  • [39] Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon
    Akhtar, W.
    Morishita, H.
    Sawano, K.
    Shiraki, Y.
    Vlasenko, L. S.
    Itoh, K. M.
    PHYSICAL REVIEW B, 2011, 84 (04):
  • [40] Theory-guided oxygen-vacancy for enhancing H2S sensing performance of NiO
    Li, Ke
    Luo, Yuanyuan
    Liu, Bo
    Wang, Hong
    Gao, Lei
    Duan, Guotao
    CHEMICAL ENGINEERING JOURNAL, 2022, 432
12345