INVOLVEMENT OF OXYGEN-VACANCY DEFECTS IN ENHANCING OXYGEN DIFFUSION IN SILICON

被引：42
|
作者：
OATES, AS [1 ]
NEWMAN, RC [1 ]
机构：
[1] JJ THOMSON PHYS LAB,READING RG6 2AF,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 05期
关键词：
D O I：
10.1063/1.97190
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：262 / 264
页数：3
相关论文
共 50 条
  • [1] IR studies of oxygen-vacancy related defects in irradiated silicon
    Londos, CA
    Fytros, LG
    Georgiou, GJ
    DEFECT AND DIFFUSION FORUM, 1999, 172 : 1 - 31
  • [2] IR studies of oxygen-vacancy related defects in irradiated silicon
    Londos, C.A.
    Fytros, L.G.
    Georgiou, G.J.
    Diffusion and Defect Data. Pt A Defect and Diffusion Forum, 1999, 171 (01): : 1 - 32
  • [3] Biradical states of oxygen-vacancy defects in α-quartz
    Mashkovtsev, R. I.
    Howarth, D. F.
    Weil, J. A.
    PHYSICAL REVIEW B, 2007, 76 (21)
  • [4] Energy levels of oxygen-vacancy complex in silicon
    Makarenko, LF
    DOKLADY AKADEMII NAUK BELARUSI, 1996, 40 (04): : 59 - 63
  • [5] Microscopic study of oxygen-vacancy defects in ferroelectric perovskites
    Park, CH
    Chadi, DJ
    PHYSICAL REVIEW B, 1998, 57 (22) : R13961 - R13964
  • [6] Phosphorous-vacancy-oxygen defects in silicon
    Wang, H.
    Chroneos, A.
    Hall, D.
    Sgourou, E. N.
    Schwingenschloegl, U.
    JOURNAL OF MATERIALS CHEMISTRY A, 2013, 1 (37) : 11384 - 11388
  • [7] Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon
    Londos, C. A.
    Aliprantis, D.
    Sgourou, E. N.
    Chroneos, A.
    Pochet, P.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (12)
  • [8] Spin-dependent recombination involving oxygen-vacancy complexes in silicon
    Franke, David P.
    Hoehne, Felix
    Vlasenko, Leonid S.
    Itoh, Kohei M.
    Brandt, Martin S.
    PHYSICAL REVIEW B, 2014, 89 (19)
  • [9] Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior
    C. A. Londos
    E. N. Sgourou
    A. Chroneos
    Journal of Materials Science: Materials in Electronics, 2014, 25 : 914 - 921
  • [10] Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior
    Londos, C. A.
    Sgourou, E. N.
    Chroneos, A.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (02) : 914 - 921
12345