STRUCTURE EFFECTS ON SCHOTTKY-BARRIER HEIGHTS OF PB/SI AND BI/SI INTERFACES

被引：9
|
作者：
HRICOVINI, K
LELAY, G
KAHN, A
TALEBIBRAHIMI, A
BONNET, JE
LASSABATERE, L
DUMAS, M
机构：
[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544
[2] CNRS,CRMC2,F-13288 MARSEILLE 9,FRANCE
[3] UNIV MONTPELLIER 2,LESIC,F-34060 MONTPELLIER,FRANCE
[4] UNIV AIX MARSEILLE 1,UFR SCI MAT,F-13331 MARSEILLE 3,FRANCE
来源：
SURFACE SCIENCE | 1991年 / 251卷
关键词：
D O I：
10.1016/0039-6028(91)91027-U
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hv = 108 eV), we recorded spectra in a surface-sensitive mode (hv = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.
引用
收藏
页码：424 / 427
页数：4
相关论文
共 50 条
  • [31] AGING EFFECTS IN SI-DOPED AL SCHOTTKY-BARRIER DIODES
    REITH, TM
    APPLIED PHYSICS LETTERS, 1976, 28 (03) : 152 - 154
  • [32] EFFECTS OF HYDROGEN ON AL/P-SI SCHOTTKY-BARRIER DIODES
    JIA, YQ
    QIN, GG
    APPLIED PHYSICS LETTERS, 1990, 56 (07) : 641 - 643
  • [33] COMMENT ON ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
    HORVATH, ZJ
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 443 - 444
  • [34] EFFECTS OF ANNEALING INP(110) SURFACES ON SCHOTTKY-BARRIER HEIGHTS AT PD/INP(110) INTERFACES
    YAMADA, M
    SPINDT, CJ
    MIYANO, KE
    MEISSNER, PL
    HERRERAGOMEZ, A
    KENDELEWICZ, T
    SPICER, WE
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 314 - 317
  • [35] PHOTOEMISSION-STUDY OF THE GROWTH, DESORPTION, SCHOTTKY-BARRIER FORMATION, AND ATOMIC-STRUCTURE OF PB ON SI(111)
    CARLISLE, JA
    MILLER, T
    CHIANG, TC
    PHYSICAL REVIEW B, 1992, 45 (07): : 3400 - 3409
  • [36] SCHOTTKY-BARRIER HEIGHT DEPENDENCE ON SI CRYSTAL ORIENTATION
    GUTKNECHT, P
    STRUTT, MJO
    APPLIED PHYSICS LETTERS, 1972, 21 (09) : 405 - +
  • [37] On the barrier heights distribution in Pd2Si/Si Schottky diodes
    Chand, S
    Kumar, J
    SEMICONDUCTOR DEVICES, 1996, 2733 : 196 - 198
  • [38] INTERFACE STRUCTURE AND SCHOTTKY BARRIERS AT EPITAXIAL SI(111)/PB INTERFACES
    WEITERING, HH
    HIBMA, T
    HESLINGA, DR
    KLAPWIJK, TM
    SURFACE SCIENCE, 1991, 251 : 616 - 620
  • [39] CHEMICAL TREND IN SILICIDE ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER HEIGHTS OF SILICIDE-SILICON INTERFACES
    HARA, S
    OHDOMARI, I
    PHYSICAL REVIEW B, 1988, 38 (11): : 7554 - 7557
  • [40] THE CORRELATION OF MICROSTRUCTURAL PROPERTIES AND THE COURSE OF SCHOTTKY-BARRIER FORMATION AT PD-SI(111) INTERFACES
    CLABES, JG
    MEYER, G
    VONLOBBECKE, H
    SIMM, CD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 931 - 932
12345