STRUCTURE EFFECTS ON SCHOTTKY-BARRIER HEIGHTS OF PB/SI AND BI/SI INTERFACES

被引：9
|
作者：
HRICOVINI, K
LELAY, G
KAHN, A
TALEBIBRAHIMI, A
BONNET, JE
LASSABATERE, L
DUMAS, M
机构：
[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544
[2] CNRS,CRMC2,F-13288 MARSEILLE 9,FRANCE
[3] UNIV MONTPELLIER 2,LESIC,F-34060 MONTPELLIER,FRANCE
[4] UNIV AIX MARSEILLE 1,UFR SCI MAT,F-13331 MARSEILLE 3,FRANCE
来源：
SURFACE SCIENCE | 1991年 / 251卷
关键词：
D O I：
10.1016/0039-6028(91)91027-U
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hv = 108 eV), we recorded spectra in a surface-sensitive mode (hv = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.
引用
收藏
页码：424 / 427
页数：4
相关论文
共 50 条
  • [21] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
    EGLASH, SJ
    NEWMAN, N
    PAN, S
    MO, D
    SHENAI, K
    SPICER, WE
    PONCE, FA
    COLLINS, DM
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5159 - 5169
  • [22] Gallium Schottky-barrier formation of Si(113)
    Althainz, P., 1600, (41):
  • [23] GALLIUM SCHOTTKY-BARRIER FORMATION OF SI(113)
    ALTHAINZ, P
    MYLER, U
    JACOBI, K
    VACUUM, 1990, 41 (1-3) : 699 - 701
  • [24] FORMATION OF THE SCHOTTKY-BARRIER AT THE PD/SI INTERFACE
    PURTELL, RJ
    HO, PS
    RUBLOFF, GW
    SCHMID, PE
    PHYSICA B & C, 1983, 117 (MAR): : 834 - 836
  • [25] THE FORMATION OF THE SCHOTTKY-BARRIER AT THE V/SI INTERFACE
    CLABES, JG
    RUBLOFF, GW
    REIHL, B
    PURTELL, RJ
    HO, PS
    ZARTNER, A
    HIMPSEL, FJ
    EASTMAN, DE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 684 - 687
  • [26] SCHOTTKY-BARRIER HEIGHTS OF IR/P-SI AND IR/STRAINED P-SI1-XGEX JUNCTIONS
    NUR, O
    SARDELA, MR
    WILLANDER, M
    TURAN, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (04) : 551 - 555
  • [27] SCHOTTKY-BARRIER HEIGHTS OF PT AND IR SILICIDES FORMED ON SI SIGE MEASURED BY INTERNAL PHOTOEMISSION
    JIMENEZ, JR
    XIAO, X
    STURM, JC
    PELLEGRINI, PW
    WEEKS, MM
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 5160 - 5164
  • [28] SCHOTTKY-BARRIER HEIGHTS OF NICKEL-PLATINUM SILICIDE CONTACTS ON NORMAL-TYPE SI
    TERRY, LE
    SALTICH, J
    APPLIED PHYSICS LETTERS, 1976, 28 (04) : 229 - 231
  • [29] TAILORING OF SCHOTTKY-BARRIER HEIGHTS IN SI AND GAAS USING METAL-ALLOYS FOR INFRARED DETECTORS
    SHARMA, BL
    JAIN, VK
    JALWANIA, CR
    INFRARED PHYSICS, 1992, 33 (05): : 395 - 399
  • [30] COMPARISON OF SCHOTTKY-BARRIER HEIGHTS OF COSI2 FORMED FROM EVAPORATED OR CRYSTALLINE SI
    LIEN, CD
    FINETTI, M
    NICOLET, MA
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (01): : 47 - 50
12345