DEPENDENCE OF HYPERFINE SPLITTING IN EPR SPECTRUM OF PHOSPHORUS ON UNIAXIAL COMPRESSION OF HEAVILY DOPED N-TYPE SILICON

被引：0
|
作者：
GINODMAN, VB
GLADKOV, PS
ZHURKIN, BG
PENIN, NA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：264 / &
相关论文
共 50 条
  • [41] n-type phosphorus-doped polycrystalline diamond on silicon substrates
    Ghodbane, S.
    Omnes, F.
    Bustarret, E.
    Tavares, C.
    Jomard, F.
    DIAMOND AND RELATED MATERIALS, 2008, 17 (7-10) : 1324 - 1329
  • [42] Adjustment of resistivity for phosphorus-doped n-type multicrystalline silicon
    Buchovska, Iryna
    Dadzis, Kaspars
    Dropka, Natasha
    Kiessling, Frank M.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2022, 248
  • [43] SELF-ENERGIES OF PHONONS IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
    PINTSCHOVIUS, L
    VERGES, JA
    CARDONA, M
    PHYSICAL REVIEW B, 1982, 26 (10): : 5658 - 5667
  • [44] TEMPERATURE DEPENDENCE OF FORBIDDEN-BAND WIDTH OF HEAVILY DOPED N-TYPE GERMANIUM
    ROGACHEV, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 187 - +
  • [45] REFLECTION FROM HEAVILY DOPED SAMPLES OF N-TYPE PBTE IN INFRARED PART OF SPECTRUM
    SMIRNOV, IK
    UKHANOV, YI
    NENSBERG, ED
    MELNIK, RB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (06): : 746 - &
  • [46] An Etchant for Delineation of Flow Pattern Defects in Heavily Doped n-type Silicon Wafers
    Xu, Tao
    Zhang, Xinpeng
    Ma, Xiangyang
    Yang, Deren
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012), 2012, 44 (01): : 751 - 757
  • [47] RECOMBINATION MEASUREMENT OF N-TYPE HEAVILY DOPED LAYER IN HIGH/LOW SILICON JUNCTIONS
    BELLONE, S
    BUSATTO, G
    RANSOM, CM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 532 - 537
  • [48] COMMENT ON COMPARISON OF EXPERIMENTAL AND THEORETICAL CARRIER CONCENTRATIONS IN HEAVILY DOPED N-TYPE SILICON
    NEUMARK, GF
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3618 - 3619
  • [49] INFLUENCE OF HEAT TREATMENT ON ELECTRICAL PROPERTIES OF N-TYPE SILICON HEAVILY DOPED WITH OXYGEN
    KURILO, PM
    SEITOV, E
    KHITREN, MI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1953 - &
  • [50] MEASUREMENT OF MINORITY-CARRIER TRANSPORT PARAMETERS IN HEAVILY DOPED N-TYPE SILICON
    DELALAMO, J
    SWANSON, RM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2555 - 2555
12345