DEPENDENCE OF HYPERFINE SPLITTING IN EPR SPECTRUM OF PHOSPHORUS ON UNIAXIAL COMPRESSION OF HEAVILY DOPED N-TYPE SILICON

被引:0
|
作者
GINODMAN, VB
GLADKOV, PS
ZHURKIN, BG
PENIN, NA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 02期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:264 / &
相关论文
共 50 条
  • [32] ESR IN HEAVILY DOPED N-TYPE SILICON NEAR A METAL - NONMETAL TRANSITION
    OCHIAI, Y
    MATSUURA, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 243 - 252
  • [33] Hydrogen passivation of donors and hydrogen states in heavily doped n-type silicon
    Fukata, N
    Sasaki, S
    Fujimura, S
    Haneda, H
    Murakami, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 3937 - 3941
  • [34] The advantages of N-type heavily-doped silicon as an emitter for vacuum microelectronics
    Huang, QA
    Qin, M
    IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, : 155 - 157
  • [35] PIEZORESISTANCE IN HEAVILY DOPED N-TYPE GERMANIUM
    POLLAK, M
    PHYSICAL REVIEW, 1958, 111 (03): : 798 - 802
  • [36] MAGNETORESISTANCE IN HEAVILY DOPED N-TYPE GERMANIUM
    FURUKAWA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (04) : 630 - &
  • [37] PHOTOLUMINESCENCE OF HEAVILY DOPED N-TYPE CDSE
    LEVY, M
    LEE, WK
    SARACHIK, MP
    GESCHWIND, S
    PHYSICAL REVIEW B, 1992, 45 (20): : 11685 - 11692
  • [38] PROPERTIES OF HEAVILY DOPED N-TYPE GERMANIUM
    SPITZER, WG
    TRUMBORE, FA
    LOGAN, RA
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 1822 - &
  • [39] PIEZORESISTANCE IN HEAVILY DOPED N-TYPE GERMANIUM
    POLLAK, M
    PHYSICAL REVIEW LETTERS, 1958, 1 (01) : 44 - 44
  • [40] EPR study of conduction electrons in heavily doped n-type 4H SiC
    Savchenko, Dariya V.
    Kalabukhova, Ekaterina N.
    Poeppl, Andreas
    Mokhov, Evgenij N.
    Shanina, Bela D.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (12): : 2950 - 2956