共 50 条
- [1] INFLUENCE OF HOPPING MOTION OF ELECTRONS ON EPR SPECTRUM OF PHOSPHORUS IN HEAVILY DOPED N-TYPE SILICON SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2839 - +
- [2] EFFECT OF COMPENSATION IN HYPERFINE SPLITTING OF EPR SPECTRUM OF PHOSPHORUS IN STRONGLY DOPED N-SILICON JETP LETTERS-USSR, 1967, 6 (10): : 321 - +
- [3] EPR OF PHOSPHORUS IN COMPENSATED N-TYPE SI SUBJECTED TO UNIAXIAL COMPRESSION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1489 - +
- [6] PLASMA OSCILLATIONS IN HEAVILY DOPED N-TYPE SILICON PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5371): : 25 - &
- [8] TEMPERATURE DEPENDENCE OF RESISTIVITY OF HEAVILY DOPED N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1915 - &
- [10] MAGNETIC-FIELD DEPENDENCE OF SPECIFIC-HEAT OF HEAVILY DOPED N-TYPE SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (04): : 484 - 484