IMPLANTED AS REDISTRIBUTION DURING ANNEALING IN OXIDIZING AMBIENT

被引:9
|
作者
NAKAMURA, K
KAMOSHIDA, M
机构
关键词
D O I
10.1149/1.2131707
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1518 / 1521
页数:4
相关论文
共 50 条
  • [11] Effects of hydrogen atoms on redistribution of implanted boron atoms in silicon during annealing
    Yokota, Katsuhiro
    Nakase, Shuusaku
    Myashita, Fumiyoshi
    ION IMPLANTATION TECHNOLOGY, 2006, 866 : 88 - +
  • [12] Dopant redistribution during gate oxidation including transient enhanced diffusion in oxidizing ambient
    Uchida, T
    Eikyu, K
    Fujinaga, M
    Teramoto, A
    Miyoshi, H
    IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 795 - 798
  • [13] DOPANT REDISTRIBUTION OF AS-IMPLANTED SOI FILMS DURING RAPID THERMAL ANNEALING
    LIN, CL
    TSOU, SC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 627 - 628
  • [14] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING
    MAGEE, TJ
    KAWAYOSHI, H
    ORMOND, RD
    CHRISTEL, LA
    GIBBONS, JF
    HOPKINS, CG
    EVANS, CA
    DAY, DS
    APPLIED PHYSICS LETTERS, 1981, 39 (11) : 906 - 908
  • [15] Redistribution of P atoms in oxidized P-implanted silicon during annealing
    Katsuhiro Yokota*
    Makoto Aoki
    Kazuhiro Nakamura
    Masayasu Tannjou
    Shigeki Sakai
    Kouhei Sekine
    Masanori Watanabe
    Journal of Materials Science: Materials in Electronics, 2004, 15 : 455 - 461
  • [16] DOPANT REDISTRIBUTION OF As-IMPLANTED SOI FILMS DURING RAPID THERMAL ANNEALING.
    Lin, Cheng-lu
    Tsou, Shih-chang
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B21 (2-4) : 627 - 628
  • [17] AMBIENT EFFECTS ON ANNEALING OF PHOSPHORUS IMPLANTED EMITTERS
    TSENG, WF
    KOJI, T
    MAYER, JW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1357 - 1358
  • [18] SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing
    Gerasimenko, NN
    Khryashchev, GS
    Kuryshev, GL
    Myasnikov, AM
    Obodnikov, VI
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 111 (3-4): : 281 - 284
  • [19] Platinum implanted lithium niobate - annealing behavior and dopant redistribution
    Kling, A.
    Soares, J.C.
    da Silva, M.F.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 141 (1-4): : 436 - 440
  • [20] Redistribution of Al in implanted SiC layers as a result of thermal annealing
    Aleksandrov, O. V.
    Kalinina, E. V.
    SEMICONDUCTORS, 2009, 43 (05) : 557 - 562